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Электронный компонент: MRA0610-18A

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CES
I
C
= 50 mA
40
V
BV
EBO
I
E
= 1.0 mA
3.5
V
I
CBO
V
CB
= 22 V
1.25
mA
h
FE
V
CE
= 5.0 V
I
C
= 500 mA
10
90
---
C
OB
V
CB
= 22 V
f = 1.0 MHz
10
pF
P
G



C
V
CE
= 22 V P
OUT
= 6.0 W f = 2000 to 2300 MHz
6.8
40

dB
%
NPN SILICON RF POWER TRANSISTOR
MRAL2023-6
PACKAGE STYLE .250 2L FLG (C)


1 = COLLECTOR 2 = BASE
3 = EMITTER
DESCRIPTION:

The
ASI MRAL2023-6
is a Common
Base Device Designed for class C
Amplifier Applications in L-Band FM
Microwave Links.
FEATURES INCLUDE:
Gold Metallization
Emitter Ballasting
Input Matching
MAXIMUM RATINGS
I
C
1.25 A
V
CES
40 V
P
DISS
21 W @ T
C
= 25 C
T
J
-65 C to +200 C
T
STG
-65 C to +150 C



JC
8.0 C/W