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Электронный компонент: MRF1004MA

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CBO
I
C
= 5.0 mA
50 V
BV
CEO
I
C
= 5.0 mA
20
V
BV
EBO
I
E
= 1.0 mA
3.5
V
I
CBO
V
CB
= 35 V
0.5
mA
h
FE
V
CE
= 5.0 V I
C
= 75 mA
10
100
---
P
G



C
V
CC
= 35 V
P
OUT
= 4.0 W f = 1090 MHz
10
40
11
45
dB
%
NPN SILICON RF POWER TRANSISTOR
MRF1004MA
DESCRIPTION:
The
ASI MRF1004MA
is Designed
for Class B and C, TACAN, IFF, and
DME Applications up to 1090 MHz.
FEATURES:
Class B and C Operation
Common Base
P
G
= 10 dB at 4.0 W/1090 MHz
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
250 mA
V
CE
20 V
P
DISS
7.0 W @ T
C
= 25C
T
J
-65
O
C to +200 C
T
STG
-65
O
C to +150 C



JC
25.0
O
C/W
PACKAGE STYLE .280 4L STUD


1 = Collector 2 = Emitter 3 & 4 = Base