A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
UNITS
BV
CES
I
C
= 50 mA
40
V
BV
CBO
I
C
= 50 mA
40
V
BV
CEO
I
C
= 50 mA
20
V
BV
EBO
I
E
= 1.0 mA
4.0
V
I
CES
V
CE
= 12.5 V
5.0
mA
h
FE
I
C
= 1.0 A
V
CE
= 5.0 V
10
35
---
C
ob
V
CB
= 12.5 V f = 1.0 MHz
200
pF
P
out
V
CE
= 12.5 V f = 30 MHz
20
W
(PEP)
G
PE
IMD
V
CC
= 12.5 V I
C
1.75 A P
out
= 20 W
(PEP)
I
cq
= 25 mA
f = 30, 30.001 MHz
12
45
-30
dB
%
dB
V
CC
= 12.5 V I
C
1.75 A P
out
= 20 W
(PEP)
I
cq
= 25 mA
f = 30, 30.001 MHz
>
30:1
ALL PHASE ANGLES
NPN SILICON RF POWER TRANSISTOR
MRF406
DESCRIPTION:
The
MRF406
is Designed for
12.5 V 30 MHz Power Amplifier
Applications.
FEATURES INCLUDE:
Common Emitter
Output Power = 20 W
(PEP)
MAXIMUM RATINGS
I
C
4.0 A
V
CE
20 V
V
CB
40 V
P
DISS
80 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
JC
2.2
O
C/W
PACKAGE STYLE .380" 4L FLG
MINIMUM
inches / mm
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.980 / 24.89
inches / mm
H
.160 / 4.06
.180 / 4.57
DIM
.220 / 5.59
.230 / 5.84
.105 / 2.67
.085 / 2.16
I
J
.240 / 6.10
.255 / 6.48
.785 / 19.94
F
B
G
.125
.125 NOM.
FULL R
D
E
C
H
.112 x 45
A
I
J
.004 / 0.10
.006 / 0.15
.280 / 7.11
.720 / 18.29
.730 / 18.54
C
B
E
E
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