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Электронный компонент: SD1019-02

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A D V A N C E D S E M I C O N D U C T O R, I N C.
REV 0
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL TEST
CONDITIONS
MINIMUM
TYPICAL
MAXIMUM
UNITS
BV
CBO
I
C
= 20 mA
65
V
BV
CEO
I
C
= 200 mA
35
V
BV
EBO
I
E
= 10 mA
4.0
V
I
CBO
V
CB
= 30 V
1.5
mA
h
FE
V
CE
= 5.0 V I
C
= 500 mA
5.0
---
C
OB
V
CB
= 30 V
f = 1.0 MHz
150
pF
P
OUT
P
G
V
CC
= 13.5 V P
IN
= 10.6 W f = 150 MHz
30
4.5

W
dB
NPN SILICON RF POWER TRANSISTOR
SD1019-02
DESCRIPTION:
The
ASI SD1019-02
is Designed for
VHF Communications up to 136 MHz
FEATURES:
P
G
= 4.5 dB Minimum at 150 MHz



OmnigoldTM Metallization System
MAXIMUM RATINGS
I
C
9.0 A
V
CB
65 V
V
CE
35 V
P
DISS
117 W @ T
C
= 25
O
C
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C



JC
1.7
O
C/W
PACKAGE STYLE .380 4 LEAD FLG
1 = COLLECTOR 3 & 4 = EMITTER 2 = BASE