A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 C
SYMBOL
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 100 mA
55
V
BV
CES
I
C
= 100 mA V
BE
= 0 V
110
V
BV
CBO
I
C
= 100 mA
110
V
BV
EBO
I
E
= 10 mA
4.0
V
I
CES
V
CE
= 60 V
V
BE
= 0 V
5.0
mA
I
CEO
V
CE
= 30 V
5.0
mA
h
FE
V
CE
= 6.0 V I
C
= 1.4 A
22.5
27.0
---
C
ob
V
CB
= 50 V
f = 1.0 MHz
220
pF
P
g
IMD
3
C
V
CE
= 50 V
I
cq
= 100 mA
f = 30 MHz P
out
=150 W
(PEP)
14
37
-37
45
-30
dB
dBc
%
NPN SILICON RF POWER TRANSISTOR
THX15C
DESCRIPTION:
The
ASI THX15C
is a Common
Emitter Device Designed for High
Linearity Class A/AB HF Applications.
FEATURES INCLUDE:
Gold Metalization
Emitter Ballasting
MAXIMUM RATINGS
I
C
10 A
V
CB
110 V
P
DISS
233 W @ T
C
= 25 C
T
J
-65 C to +200 C
T
STG
-65 C to +200 C
JC
0.75 C/W
PACKAGE STYLE .550 4L STUD
1 = COLLECTOR 2 & 4 = EMITTER
3 = BASE
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