A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25
O
C
SYMBOL
NONE
TEST CONDITIONS
MINIMUM TYPICAL MAXIMUM UNITS
BV
CEO
I
C
= 200 mA
35
V
BV
CES
I
C
= 200 mA
65
V
BV
EBO
I
E
= 10 mA
4.0
V
I
CBO
V
CB
= 28 V
2.0
mA
I
CES
V
CE
= 28 V T
C
= 125
O
C
10
mA
h
FE
V
CE
= 5.0 V I
C
= 500 mA
5.0
---
---
C
ob
V
CB
= 28 V f = 1.0 MHz
80
pF
f
T
V
CE
= 10 V I
C
= 500 mA f = 100 MHz
200
MHz
P
G
C
V
CE
= 28 V P
OUT
= 50 W f = 150 MHz
6.0
60
dB
%
NPN SILICON RF POWER TRANSISTOR
VHB50-28S
DESCRIPTION:
The
ASI VHB50-28S
is Designed for
FEATURES:
OmnigoldTM Metalization System
MAXIMUM RATINGS
I
C
6.5 A
V
CBO
65 V
V
CEO
35 V
V
EBO
4.0 V
P
DISS
75 W
T
J
-65
O
C to +200
O
C
T
STG
-65
O
C to +150
O
C
JC
2.3
O
C/W
PACKAGE STYLE .380 4L STUD
ORDER CODE: ASI10730
MINIMUM
inches / mm
.004 / 0.10
.370 / 9.40
.320 / 8.13
B
C
D
E
F
G
A
MAXIMUM
.385 / 9.78
.330 / 8.38
.130 / 3.30
.007 / 0.18
inches / mm
H
.090 / 2.29
.100 / 2.54
DIM
.220 / 5.59
.230 / 5.84
.490 / 12.45
.450 / 11.43
I
J
.155 / 3.94
.175 / 4.45
.750 / 19.05
.980 / 24.89
.100 / 2.54
E
F
D
C
B
.112x45
G
H
J
I
A
#8-32 UNC-2A
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