Rev. 4525DSIGE10/03
Features
Active Mixer with Conversion Gain
No External LO Driver Necessary
Low LO Drive Level Required
RF and LO Ports May Be Driven Single-ended
Single 5-V Supply Voltage
High LO-RF Isolation
Broadband Resistive 50-
Impedances on All Three Ports
Small SSO16 Package
Applications
Digital Communication Systems
800 MHz to 1000 MHz Transceivers for Base Stations
Electrostatic sensitive device.
Observe precautions for handling.
Description
The T0780 is a high linearity active mixer which is manufactured using Atmel's
advanced Silicon-Germanium (SiGe) technology. This mixer features a frequency
range of 800 MHz to 1000 MHz. It operates from a single 5-V supply and provides
10 dB of conversion gain while requiring only 0 dBm input to the integrated LO driver.
An IF amplifier is also included.
The T0780 incorporates internal matching on each RF, IF and LO port to enhance
ease of use and to reduce the external components required. The RF and LO inputs
can be driven differentially or single-ended.
Figure 1. Block Diagram
IFP
IFN
LOP
LON
RFP
RFN
4
5
13
1
16
12
800 MHz -
1000 MHz
High Linearity
SiGe Active
Receive Mixer
T0780
Preliminary
2
T0780 [Preliminary]
4525DSIGE10/03
Pin Configuration
Figure 2. Pinning SSOP16
IFN
VCC
GND
LOP
LON
GND
VCC
L2
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
IFP
VCC
GND
RFP
RFN
GND
VCC
L1
Pin Description
Pin
Symbol
Function
1
IFP
IF positive output
2
VCC
5-V power supply
3
GND
Ground
4
RFP
RF positive input
5
RFN
RF negative input
6
GND
Ground
7
VCC
5-V power supply
8
L1
External inductor terminal
9
L2
External inductor terminal
10
VCC
5-V power supply
11
GND
Ground
12
LON
Local oscillator, negative input
13
LOP
Local oscillator, positive input
14
GND
Ground
15
VCC
5-V power supply
16
IFN
IF negative output
Absolute Maximum Ratings
All voltages are referred to GND.
Parameters
Symbol
Value
Unit
Supply voltage
V
CC
5 to 5.5
V
LO input
LO
P
, LO
N
10
dBm
IF input
RF
P
, RF
N
15
dBm
Operating temperature
T
OP
-40 to +85
C
Storage temperature
T
stg
-65 to +150
C
3
T0780 [Preliminary]
4525DSIGE10/03
Thermal Resistance
Parameters
Symbol
Value
Unit
Junction ambient
R
thJA
TBD
K/W
Junction case
R
thJC
46
C/W
Electrical Characteristics
Test Conditions: V
CC
= +5 V, T
amb
= +25C; RF input: -20 dBm at 900 MHz; LO output: 0 dBm at 700 MHz
No.
Parameters
Test Conditions/Pins
Pin
Symbol
Min.
Typ.
Max.
Unit
Type *
1
AC Performance
1.1
RF frequency range
f
RF
800
1000
MHz
B, C
1.11
LO frequency range
f
LO
500
1000
MHz
B, C
1.2
IF frequency range
F
IF
30
200
300
MHz
B, C
1.5
Conversion gain
7
10
dB
A
1.6
SSB noise figure
15
19
dB
D
1.3
Input IP3
RF1 = RF2 = 15 dBm/tone,
1 MHz spacing
IP3
15
19
dBm
D
1.4
Input P1dB
2
5
dBm
D
1.7
RF return loss
Matched to 50
W
(1)
20
dB
D
1.8
LO return loss
Matched to 50
W
(1)
20
dB
D
1.9
IF return loss
Matched to 50
W
(1)
20
dB
D
1.10
LO drive
Matched to 50
W
(1)
-3
0
+3
dBm
D
2
Isolation Performance
2.1
Leakage (LO-RF)
Single-ended configuration
-40
-35
dBm
D
2.2
Leakage (LO-IF)
Single-ended configuration
-26
-20
dBm
D
2.3
Leakage (RF-IF)
Single-ended configuration
-40
-35
dBm
D
3
Miscellaneous
3.1
Supply voltage
V
CC
4.75
5
5.25
V
A
3.1
Supply current
I
CC
160
180
mA
A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. The return losses shown were measured with the T0780 mounted on Atmel's FR4 evaluation boards using standard
matching practices as indicated on the application schematic page herein. Users following the RF, LO and IF matching
guidelines will achieve similar performance.
4
T0780 [Preliminary]
4525DSIGE10/03
Typical Device Performance
Figure 3. Conversion Gain versus Temperature
Figure 4. Conversion Gain versus LO Drive, T
amb
= 25
C
Figure 5. Leakages, Plo = 0 dBm, Prf = -20 dBm, Single-ended Configuration
Conversion Gain vs Tem perature
0
4
8
12
16
20
800
850
900
950
1000
Frequency (MHz)
C
o
nv
e
r
s
i
on
G
a
i
n
(
d
B)
-40C
+25C
+85C
Conversion Gain vs LO Drive
T=+25C
0
4
8
12
16
20
800
850
900
950
1000
Frequency (MHz)
C
onv
er
s
i
on
G
a
i
n
(
d
B
)
Plo=-3dBm
Plo=0dBm
Plo=+3dBm
Leakages
Plo=0 dBm , Prf=-20 dBm
Singled-Ended Configuration (Note 1)
-60
-50
-40
-30
-20
-10
0
800
850
900
950
1000
Frequency (MHz)
L
eak
age
(
d
B
m
)
LO-RF
LO-IF
RF-IF
5
T0780 [Preliminary]
4525DSIGE10/03
Figure 6. Input IP3 versus Temerature
Figure 7. Input IP3 versus LO Drive, T
amb
= 25
C
Figure 8. Noise Figure versus Temperature, Plo = 0 dBm
Input IP3 vs Tem perature
10
15
20
25
30
800
850
900
950
1000
Frequency (MHz)
In
pu
t IP
3
(
d
B
m
)
-40C
+25C
+85C
Input IP3 vs LO Drive
T=+25C
10
15
20
25
30
800
850
900
950
1000
Frequency (MHz)
I
npu
t IP
3
(
d
B
m
)
Plo=-3dBm
Plo=0dBm
Plo=+3dBm
Noise Figure vs Tem perature
Plo=0dBm
10
12
14
16
18
20
800
850
900
950
1000
Frequency (MHz)
N
o
i
s
e F
i
gu
r
e
(
d
B
)
-40C
+25C
+85C
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