Rev. 4157BAERO06/02
Features
Organized as 2M x 8 bits
Single 3.3V Power Supply
Stacks of 16 SRAM 128K x 865609E Die
Access Time: 40 ns
Very Low Power Consumption
Active: 100 mW (Typ)
Standby: 1 mW (Typ)
TTL-Compatible Inputs and Outputs
Die Designed on 0.35 Micron Process
Latch-up Immune
200 Krads (TM1019.5)
Wide Temperature Range 55C to +125C
Built and Tested by 3D+, using 3D+ Die Stacking Technology
Description
The AT61162E is a Rad Tolerant module, highly-integrated and very low-power
CMOS static RAM organized as 2M x 8 bits. It is organized with 16 banks of 1 Mbit.
Each bank has a 8-bit interface and is selected with 16 specific CS: 0 - 15. Banks are
selectable by pairs with 8 specific BS: 0 - 7.
This module takes full benefit of the 3D+ cube technology, and it is assembled and
tested by 3D+, using Atmel 65609E 1-Mbit SRAM die: it is built with 8 layers, each one
housing 2 dies. 10 nF decoupling capacitors are embedded for each memory die.
This module brings the solution to applications where fast computing is as mandatory
as low power consumption, for example: space electronics, portable instruments, or
embarked systems.
AT61162E is processed according to the methods of the latest revision of the MIL
PRF 38535, QML N (QML Q counterpart for plastic).
The package is a 64 gull wing pins dual in line, 11 mm wide, 28 mm long and 14.3 mm
height and 0.8 mm pin pitch.
Rad Hard
2-Mbit x 8
SRAM Cube
AT61162E
Preliminary
4
AT61162E
4157BAERO06/02
Electrical Characteristics
Absolute Maximum Ratings*
Operating Range
Recommended DC
Operating Conditions
Capacitance
Supply Voltage to GND Potential ............................ 0.5 to +5V
DC Input Voltage GND ........................... GND -0.3 to V
CC
0.3V
DC Output Voltage high-Z-State GND ... GND -0.3 to V
CC
+0.3V
Storage Temperature ......................................... -65 to +150C
Output Current into Outputs (Low)................................. 20 mA
Electro Statics Discharge Voltage
(MIL STD 883D method 3015.3).................................. >1500V
*Note:
Stresses beyond those listed under "Absolute Maxi-
mum Ratings" may cause permanent damage to the
device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions
beyond those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect device reliability.
Operating Temperature
Operating Voltage
Military
-55C to 125C
3.3V 0.3V
Parameter
Description
Min
Typ
Max
Units
V
CC
Supply Voltage
3
3.3
3.6
V
Gnd
Ground
0
0
0
V
V
IH
Input High Voltage
2.2
-
V
CC
+0.3
V
V
IL
Input Low Voltage
GND-0.3
0.0
0.8
V
Parameter
Description
Min
Typ
Max
Unit
C
IN
(1)
Input Low Voltage
-
-
8
pF
C
OUT
(1)
Output High Voltage
-
-
8
pF
Note:
1. Guaranteed but not tested.
5
AT61162E
4157BAERO06/02
DC Parameters
Consumption
Parameter
Description
Min
Typ
Max
Unit
I
IX
(1)
1.
Gnd < V
IN
< V
CC
, Gnd < V
OUT
< V
CC
Output Disabled.
Input Leakage Current
-16
-
16
A
I
OZ
(1)
Output Leakage Current
-16
-
16
A
V
OL
(2)
2.
V
CC
min. IOL = 1 mA.
Output Low Voltage
-
-
0.4
V
V
OH
(3)
3.
V
CC
min. IOH = -0.5 mA.
Output High Voltage
2.4
-
-
V
Symbol
Description
61162E-35
Unit
Value
ICCSB
(1)
1.
CS
0.0
- CS
7.1
> V
IH
or BS
0
- BS7 < V
IL
and CS
0.0
- CS
7.1
< V
IL
.
Standby Supply Current
40
mA
max
ICCSB
1
(2)
2.
CS
0.0
> V
CC
- 0.3V or, BS
0
- BS7 < Gnd + 0.3V and CS
0.0
- CS
7.1
< 0.2V
Standby Supply Current
32
mA
max
ICCOP
(3)
3.
One bank active (F = 1/T
AVAV
, I
OUT
= 0 mA, W = OE = V
IH
, V
IN
= Gnd/V
CC
, V
CC
max.), other banks stand by TTL (note 1) or CMOS
(note 2).
Dynamic Operating Current
90
mA
max
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