KST-9010-000
1
2N3904
NPN Silicon Transistor
Descriptions
General small signal application
Switching application
Features
Low collector saturation voltage
Collector output capacitance
Complementary pair with 2N3906
Ordering
Information
Type NO.
Marking
Package Code
2N3904
2N3904
TO-92
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
4.5
0.1
4.
5
0.
1
0.4
0.02
1.27 Typ
.
2.54 Typ
.
1 2 3
3.45
0.1
2.25
0.1
2.06
0.1
1.
2
0
0.
1
0.
3
8
PIN Connections
1. Emitter
2. Base
3. Collector
14.
0
0.
40
KST-9010-000
2
2N3904
Absolute maximum ratings
Ta=25
C
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
60
V
Collector-Emitter voltage
V
CEO
40
V
Emitter-base voltage
V
EBO
6
V
Collector current
I
C
200
mA
Collector dissipation
P
C
625
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55~150
C
Electrical Characteristics
Ta=25
C
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=10
A, I
E
=0
60
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0
40
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=10
A, I
C
=0
6
-
-
V
Collector cut-off current
I
CEX
V
CE
=30V, V
EB
=3V
-
-
50
nA
DC current gain
h
FE
V
CE
=1V, I
C
=10mA
100
-
300
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=50mA, I
B
=5mA
-
-
0.3
V
Transition frequency
f
T
V
CE
=20V, I
C
=10mA,
f=100MHz
300
-
-
MHz
Collector output capacitance
C
ob
V
CB
=5V, I
E
=0, f=1MHz
-
-
4
pF
Delay time
t
d
-
-
35
ns
Rise time
t
r
V
CC
=3V
dc
, V
BE(off)
=0.5V
dc
.
I
C
=10mA
dc
, I
B1
=1mA
dc
-
-
35
ns
Storage time
t
s
-
-
200
ns
Fall Time
t
f
V
CC
=3V
dc
,I
C
=10mA
dc
,
I
B1
=I
B2
=1mA
dc
-
-
50
ns
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