KST-4017-000
1
2SC5345EF
NPN Silicon Transistor
Description
RF amplifier
Features
High current transition frequency
f
T
=550MHz(Typ.), [V
CE
=6V, I
E
=-1mA]
Low output capacitance :
C
ob
=1.4pF(Typ.) [V
CB
=6V, I
E
=0]
Low base time constant and high gain
Excellent noise response
Ordering
Information
Type NO. Marking Package Code
2SC5345E Z SOT-523F
: h
FE
rank
Outline Dimensions unit :
mm
.
0.
68
1
2
3
0~0.
1
1.
11
0.
05
1.600.1
0.880.1
1.
60
0.
1
1.
00
0.
1
0.
25~0.
30
+0
.1
-0.05
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Emitter
3. Collector
KST-4017-000
2
Absolute maximum ratings
Ta=25
C
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
30 V
Collector-Emitter voltage
V
CEO
20 V
Emitter-Base voltage
V
EBO
4 V
Collector current
I
C
20
mA
Collector dissipation
P
C
150
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55~150
C
Electrical Characteristics
Ta=25
C
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=10A, I
E
=0
30 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=5mA, I
B
=0 20
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=10A, I
C
=0
4 - - V
Collector cut-off current
I
CBO
V
CB
=30V, I
E
=0 -
-
0.5
A
Emitter cut-off current
I
EBO
V
EB
=4V, I
C
=0 -
-
0.5
A
DC current gain
h
FE
*
V
CE
=6V, I
C
=1mA 40
-
240
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=10mA, I
B
=1mA -
-
0.3
V
Transition frequency
f
T
V
CE
=6V, I
E
=-1mA -
550
-
MHz
Collector output capacitance
C
ob
V
CB
=6V, I
E
=0, f=1MHz
-
1.4
-
pF
* : h
FE
rank / R : 40~80, O : 70~140, Y : 120~240
2SC5345EF
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