KST-3039-001
1
BC858UF
PNP Silicon Transistor
Descriptions
General purpose application
Switching application
Features
High voltage : V
CEO
=-30V
Complementary pair with BC848UF
Ordering
Information
Type NO. Marking Package Code
BC858UF AV SOT-323F
: h
FE
rank
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Emitter
3. Collector
2.1
0.1
1.30
0.1
1
0.
30~0.
40
1.
30 BSC
2
2.
0
0.
1
0.
11
0.
05
0.
70-
0.
15
3
0~0.
1
+0.
1
KST-3039-001
2
BC858UF
Absolute maximum ratings
(Ta=25
C)
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
-30 V
Collector-Emitter voltage
V
CEO
-30 V
Emitter-Base voltage
V
EBO
-5 V
Collector current
I
C
-100
mA
Collector dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol Test
Condition Min.
Typ.
Max.
Unit
Collector-Emitter breakdown voltage
BV
CEO
I
C
=-1mA, I
B
=0 -30
-
-
V
Base-Emitter turn on voltage
V
BE(ON)
V
CE
=-5V, I
C
=-2mA -
-
-700
mV
Base-Emitter saturation voltage
V
BE(sat)
I
C
=-100mA, I
B
=-5mA -
-900
-
mV
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=-100mA, I
B
=-5mA -
-
-650
mV
Collector cut-off current
I
CBO
V
CB
=-35V, I
E
= 0
-
-
-15
nA
DC current gain
h
FE
*
V
CE
=-5V, I
C
=-2mA 110
-
800
-
Transition frequency
f
T
V
CB
=-5V, I
C
=-10mA -
150
-
MHz
Collector output capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
-
4.5
pF
Noise Figure
NF
V
CE
=-5V, I
C
=-200
A,
f=1KHz,Rg=2K
,
f=200Hz
- - 10 dB
* : h
FE
rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
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