KST-8012-002
1
DN500F
NPN Silicon Transistor
Description
Extremely low collector-to-emitter saturation voltage
( V
C E ( S A T )
=0.2V Typ. @I
C
/I
B
=3A/150mA)
Suitable for low voltage large current drivers
Complementary pair with DP500F
Switching Application
Ordering
Information
Type NO.
Marking
Package Code
DN500F
N5
SOT-89
: monthly code
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Collector
3. Emitter
4.0
0.50
0.1
1.82
0.05
0~0.1
1.5
-
0.1
+0.2
3
1
2
4.5
-0.3
+0.5
2.5
-0.3
+0.2
1.00
0.3
-
0.1
+0.2
0.52
0.05
0.42
0.05
0.42
-
0.02
+0.04
0.15 Typ.
KST-8012-002
2
DN500F
Absolute maximum ratings
(Ta=25
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
C B O
15
V
Collector-Emitter voltage
V
C E O
12
V
Emitter-Base voltage
V
EBO
5
V
Collector current
I
C
5
A
P
C
0.5
Collector dissipation
P
C
*
2
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
* : When mounted on 40
40
0.8mm ceramic substate
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=50
A, I
E
=0
15
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0
12
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=50
A, I
C
=0
5
-
-
V
Collector cut-off current
I
CBO
V
CB
=15V, I
E
=0
-
-
0.1
A
Emitter cut-off current
I
EBO
V
EB
=4V, I
C
=0
-
-
0.1
A
h
FE1
V
CE
=2V, I
C
=500mA
160
-
320
-
DC current gain
h
FE2
V
CE
=2V, I
C
=3A
40
-
-
-
Collector-Emitter on voltage
V
CE(sat1)
I
C
=3A, I
B
=150mA
-
-
0.3
V
Base-Emitter on voltage
V
BE(sat)
I
C
=3A, I
B
=150mA
-
-
1.2
V
Transition frequency
f
T
V
CB
=5V, I
C
=500mA
-
150
-
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
-
50
pF
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