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Электронный компонент: SDB310WAF

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KSD-2069-000
1
SDB310WAF
Schottky Barrier Diode
Features



Low power rectified
Silicon epitaxial type
High reliability
Ordering
Information
Type No.
Marking
Package Code
SDB310WA
DB2
SOT-23F
Outline Dimensions unit :
mm
PIN Connections
1. Cathode
2. Cathode
3. Anode, Anode
1
3
2
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
0.
4
0.
0
5
0~
0.
1
3
1
2
1.
9
0
B
S
C
2.
9
0.
1
0.
1
5
0.
05
2.4
0.1
0.
9
0.
1
1.6
0.1
KSD-2069-000
2
SDB310WAF
Absolute maximum ratings
Ta=25
C
Characteristic
Symbol
Ratings
Unit
Reverse voltage
V
R
30
V
Repetitive peak forward current
I
FRM
*
0.5
A
Forward current
I
F
0.2
A
Non-repetitive peak forward current(10ms)
I
FSM
2
A
Power dissipation
P
D
150
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55 ~ 150
C
* :
= D/T =0.33
(T<1S)
* : Unit ratings. Total rating=Unit rating
1.5
Electrical Characteristics
Ta=25



C
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Forward voltage 1
V
F(1)
I
F
=10m
A
-
-
0.4
V
Forward voltage 2
V
F(2)
I
F
=30mA
-
-
0.5
V
Reverse current
I
R
V
R
=30V
-
-
1
A
Total capacitance
C
T
V
R
=1V, f=1MHz
-
-
10
pF
Reverse recovery time
t
rr
I
F
= I
R
=10mA, I
RR
= 1mA, R
L
=100
-
-
5
ns
KSD-2069-000
3
SDB310WAF
Electrical Characteristic Curves
Fig. 3 C
T
-V
R
Fig. 1 I
F
-V
F
Fig. 2 I
R
-V
R