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Электронный компонент: SI5315-DS(B)

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KLI-0005-000
1
SI5315-DS/SI5315-DS(B)
High Speed IRED
Features
Colorless transparency lens type
5mm
(T-13/4)
all plastic mold type
Low power consumption
High power, High speed type
Applications
Infrared remote control and free air transmission systems with low forward voltage and
comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors.
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
STRAIGHT TYPE STOPPER TYPE
23.0 MIN
2.54NOM
1
2
5.8
0.5
3.4
0.2
0.8
0.2
5.0
0.2
8.6
0.2
1
.
0

M
I
N
1
.
0

M
I
N
23.0 MIN
2.54NOM
1
2
5.8
0.5
8.6
0.2
3.4
0.2
0.8
0.2
5.0
0.2
PIN Connections
1. Cathode
2. Anode
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KLI-0005-000
2
SI5315-DS/SI5315-DS(B)


Absolute maximum ratings
Characteristic Symbol
Ratings
Unit
Power Dissipation
P
D
150
mW
Forward Current
I
F
100
mA
*
1
Peak Forward Current
I
FP
1
A
Reverse Voltage
V
R
4
V
Operating Temperature
T
opr
-2585
Storage Temperature
T
stg
-30100
*
2
Soldering Temperature
T
sol
260 for 5 seconds
*1.Duty ratio = 1/16, Pulse width = 0.1ms
*2.Keep the distance more than 2.0mm from PCB to the bottom of IRED package
Electrical Characteristics
Characteristic Symbol
Test
Condition Min.
Typ.
Max.
Unit
Forward Voltage
V
F
I
F
= 50mA
-
1.5
2.0
V
Radiant Intensity
I
E
I
F
= 50mA
30
70
-
mW/Sr
Peak Wavelength
P
I
F
= 50mA
-
875
-
nm
Spectrum Bandwidth
I
F
= 50mA
-
45
-
nm
Rise Time
t
r
I
F
= 50mA
-
15
-
ns
Reverse Current
I
R
V
R
=4V -
-
10
uA
*
3
Half angle
1
/
2
I
F
= 50mA
-
20
- deg
*3.
1/2
is the off-axis angle where the luminous intensity is 1/2 the peak intensity
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KLI-0005-000
3
SI5315-DS / SI5315-DS(B)

Characteristic Diagrams
Fig.4 Spectrum Distribution
Fig. 3 I
F
Ta
Fig. 2 I
E
- I
F
Fig. 1 I
F
- V
F
F
o
rward Current
I
F
[mA]
Ambient Temperature Ta [
]
R
e
lative Int
e
nsit
y
[%]
Wavelength [nm]
Forward Voltage V
F
[V]
F
o
rward Current
I
F
[mA]
Forward Current I
F
[mA]
R
a
diant Intensit
y I
E
[mW
/
Sr]
Fig. 5 Radiation Diagram
Relative Radiant Intensity I
E
[%]