KST-9080-002
1
STA124
PNP Silicon Transistor
Features
Suitable for low voltage large current drivers
High DC current gain and large current capability
Complementary pair with STC128
Ordering
Information
Type NO. Marking Package Code
STA124 STA124 TO-92
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Emitter
2. Collector
3. Base
KST-9080-002
2
STA124
Absolute maximum ratings
(Ta=25
C)
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
-15 V
Collector-Emitter voltage
V
CEO
-12 V
Emitter-Base voltage
V
EBO
-6.5 V
Collector current
I
C
-1 A
Collector dissipation
P
C
625
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150 C
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol Test
Condition Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=-50A, I
E
=0
-15 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=-1mA, I
B
=0 -12
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=-50A, I
C
=0
-6.5 - - V
Collector cut-off current
I
CBO
V
CB
=-15V, I
E
=0 -
-
-0.1
A
Emitter cut-off current
I
EBO
V
EB
=-6V, I
C
=0 -
-
-0.1
A
DC current gain
h
FE
V
CE
=-1V, I
C
=-100mA 200
-
450
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA -
-0.2
-0.4
V
Transistor frequency
f
T
V
CE
=-5V, I
C
=-50mA -
260
-
MHz
Collector output capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
5
-
pF
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