KST-B002-000
1
STA353
PNP Silicon Transistor
Descriptions
High current application
Audio power amplifier
Features
High current : I
C
= -2A
Complementary pair with STC352
Ordering
Information
Type NO. Marking Package Code
STA353 STA353 MPT
Outline Dimensions unit :
mm
PIN Connections
1. Emitter
2. Collector
3. Base
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
2.50.1
.
1
6.50.2
1.2 Max.
5.00.2
3.
4
0.
2
21.
5
1.
0
2.
0
0.
1
0.
5
0.
2
1.
1
0.
1
8.
5
0.
2
12.
5 Min.
0.4~0.6
0.70 Max.
2 3
KST-B002-000
2
STA353
Absolute maximum ratings
(Ta=25
C)
Characteristic Symbol
Rating
Unit
Collector-Base voltage
V
CBO
-40 V
Collector-Emitter voltage
V
CEO
-30 V
Emitter-Base voltage
V
EBO
-5 V
Collector current
I
C
-2 A
Emitter Current
I
E
2 A
P
C
( Tc=25)
10
Collector Power dissipation
P
C
( Ta=25)
1.2
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150 C
Electrical Characteristics
(Ta=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=-100A, I
E
=0
-40 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=-10mA, I
B
=0 -30
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=-1mA, I
C
=0 -5
-
-
V
Collector cut-off current
I
CBO
V
CB
=-40V, I
E
=0 -
-
-0.1
A
Emitter cut-off current
I
EBO
V
EB
=-5V, I
C
=0 -
-
-0.1
A
DC current gain
h
FE
*
V
CE
=-2V, I
C
=-500mA 100
-
320
-
Base-Emitter on voltage
V
BE(ON)
V
CE
=-2V, I
C
=-500mA -
-
-1
V
V
CE(sat)1
I
C
=-2A, I
B
=-0.2A -
-
-0.8
Collector-Emitter saturation voltage
V
CE(sat)2
I
C
=-1.5A, I
B
=-0.03A -
-
-2
V
Transition frequency
f
T
V
CE
=-5V, I
C
=-500mA -
120
-
MHz
Collector output capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
48
-
pF
* : h
FE
rank / O : 100~200, Y : 160~320
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