KST-8001-002
1
STB1132
PNP Silicon Transistor
Description
Medium power amplifier
Features
P
C
(Collector dissipation)=2W(Ceramic substate of 40400.8mm used)
Low collector saturation voltage : V
CE(sat)
=-0.2V(Typ.)
Complementary pair with STD1664
Ordering
Information
Type NO.
Marking
Package Code
STB1132
A1
SOT-89
: h
FE
rank, monthly code
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Collector
3. Emitter
4.0
0.500.1
1.
82
0.
05
0~0.
1
1.
5
-0
.1
+0.
2
3
1
2
4.
5
-0.3
+0.5
2.5
-0.3
+0.2
1.000.3
-0
.1
+0.
2
0.
52
0.
05
0.
42
0.
05
0.
42
-
0
.
02
+0.
04
0.
15 T
y
p
.
KST-8001-002
2
STB1132
Absolute maximum ratings
(Ta=25
C)
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
-40 V
Collector-Emitter voltage
V
CEO
-32 V
Emitter-Base voltage
V
EBO
-5 V
Collector current
I
C
-1 A
P
C
0.5
Collector dissipation
P
C
*
2
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150 C
* : When mounted on 40400.8mm ceramic substate
Electrical Characteristics
(Ta=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=-50A, I
E
=0
-40 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=-1mA, I
B
=0 -32
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=-50A, I
C
=0
-5 - - V
Collector cut-off current
I
CBO
V
CB
=-20V, I
E
=0
-
-
-0.1
A
Collector cut-off current
I
CES
V
CE
=-30V, I
C
=0
-
-
-0.1
A
Emitter cut-off current
I
EBO
V
EB
=-4V, I
C
=0
-
-
-0.1
A
DC current gain
h
FE
*
V
CE
=-3V, I
C
=-0.1A 100
-
320
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA -
-0.2
-0.8
V
Transition frequency
f
T
V
CE
=-5V, I
C
=-50mA,
f=30MHz
- 150 - MHz
Collector output capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
20
30
pF
* : h
FE
rank / O : 100 ~ 200, Y : 160 ~ 320
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