KST-H001-001
1
STC403
NPN Silicon Transistor
Features
Power Transistor General Purpose application
Low saturation voltage
: V
CE(SAT)
=0.4V Typ.
High Voltage : V
CEO
=60V Min.
Ordering
Information
Type NO. Marking Package Code
STC403 STC403 TO-220F
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Collector
3. Emitter
KST-H001-001
2
STC403
Absolute maximum ratings
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
80 V
Collector-Emitter voltage
V
CEO
60 V
Emitter-base voltage
V
EBO
5 V
Collector current
I
C
3 A
Collector dissipation (Tc=25)
P
C
15 W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150 C
Electrical Characteristics
Characteristic Symbol
Test
Condition
Min.
Typ.
Max. Unit
Collector-Emitter breakdown voltage
BV
CEO
I
C
=50mA, I
B
=0 60
-
-
V
Collector cut-off current
I
CBO
V
CB
=60V, I
E
=0 -
-
50
A
Emitter cut-off current
I
EBO
V
EB
=5V, I
C
=0 -
-
50
A
DC current gain
h
FE
* V
CE
=5V, I
C
=0.5A 200
-
400
-
Base-Emitter on voltage
V
BE(ON)
V
CE
=5V, I
C
=0.5A -
0.7
1
V
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=2A, I
B
=0.2A -
0.4
1
V
Transition frequency
f
T
V
CB
=5V, I
C
=0.5A -
30
-
MH
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
20
-
pF
Turn-on Time
T
on
-
0.65
-
Storage Time
T
stg
-
1.3
-
Switching
Time
Fall Time
T
f
- 0.65 -
* hFE rank : 200~400 Only
PDF 
ZIP