KST-D002-001
1
STC722D
NPN Silicon Transistor
Description
General purpose amplifier
D-PAK for surface mount applications
Features
P
C
(Collector dissipation)=15W
Low speed switching applications
Complementary pair with STA723D
Ordering
Information
Type NO.
Marking
Package Code
STC722D
STC722
D-PAK
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Collector
3. Emitter
KST-D002-001
2
STC722D
Absolute maximum ratings
(Ta=25
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
40 V
Collector-Emitter voltage
V
CEO
30 V
Emitter-Base voltage
V
EBO
5 V
Collector current
I
C
3 A
Collector dissipation
P
C
15 W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150 C
Electrical Characteristics
(Ta=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=50A, I
E
=0
40 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0 30
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
C
=50A, I
C
=0
5 - - V
Collector cut-off current
I
CBO
V
CB
=20V, I
E
=0 -
-
1
A
Emitter cut-off current
I
EBO
V
EB
=4V, I
C
=0 -
-
1
A
V
CE
=3V, I
C
=500mA 80
-
390
DC current gain
h
FE
V
CE
=3V, I
C
=3A 10
-
-
-
Collector-Emitter saturation voltage
V
CE(sat)
V
CE
=2A, I
C
= 200mA
-
0.5
0.8
V
Transition frequency
f
T
V
CE
=5V, I
C
=500mA,
f=1MHz
- 120 - MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
13
-
pF
* : h
FE
rank / O : 80~218, Y : 120~270, G : 180~390
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