KST-9075-000
1
STC945
NPN Silicon Transistor
Description
General small signal amplifier
Features
Low collector saturation voltage : V
CE(sat)
=0.25V(Max.)
Low output capacitance : C
ob
=2pF(Typ.)
Complementary pair with STA733
Ordering
Information
Type NO.
Marking
Package Code
STC945
STC945
TO-92
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
4.5
0.1
4.
5
0.
1
0.4
0.02
1.27 Typ
.
2.54 Typ
.
1 2 3
3.45
0.1
2.25
0.1
2.06
0.1
1.
2
0
0.
1
0.
3
8
PIN Connections
1. Emitter
2. Collector
3. Base
14.
0
0.
40
KST-9075-000
2
STC945
Absolute maximum ratings
(Ta=25
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
50
V
Collector-Emitter voltage
V
CEO
40
V
Emitter-Base voltage
V
EBO
5
V
Collector current
I
C
150
mA
Collector dissipation
P
C
625
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=50
A, I
E
=0
50
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0
40
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=50
A, I
C
=0
5
-
-
V
Collector cut-off current
I
CBO
V
CB
=50V, I
E
=0
-
-
0.1
A
Emitter cut-off current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
DC current gain
h
FE
*
V
CE
=6V, I
C
=2mA
70
-
700
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=100mA, I
B
=10mA
-
-
0.25
V
Transistion frequency
f
T
V
CE
=10V, I
C
=1mA
80
-
-
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
2
3.5
pF
Noise figure
NF
V
CE
=6V, I
C
=0.1mA,
f=1KHz, Rg=10K
-
-
10
dB
* : h
FE
rank / O : 70 ~ 140, Y : 120 ~ 240, G : 200 ~ 400, L : 300 ~ 700
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