KST-2095-001
1
STD123SF
NPN Silicon Transistor
Features
Low saturation medium current application
Extremely low collector saturation voltage
Suitable for low voltage large current drivers
High DC current gain and large current capability
Low on resistance : R
ON
=0.6
(Max.) (I
B
=1mA)
Ordering
Information
Type NO.
Marking
Package Code
STD123SF
123
SOT-23F
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Emitter
3. Collector
0.
4
0.
0
5
0~
0.
1
3
1
2
1.
9
0
B
S
C
2.
9
0.
1
0.
1
5
0.
05
2.4
0.1
0.
9
0.
1
1.6
0.1
KST-2095-001
2
STD123SF
Absolute maximum ratings
(Ta=25
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
20
V
Collector-Emitter voltage
V
CEO
15
V
Emitter-Base voltage
V
EBO
6.5
V
Collector current
I
C
1
A
Collector dissipation
P
C
*
350
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
* : Package mounted on 99.5% alumina 10
8
0.1mm
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=50
A, I
E
=0
20
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0
15
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=50
A, I
C
=0
6.5
-
-
V
Collector cut-off current
I
CBO
V
CB
=20V, I
E
=0
-
-
0.1
A
Emitter cut-off current
I
EBO
V
EB
=6V, I
C
=0
-
-
0.1
A
DC current gain
h
FE
V
CE
=1V, I
C
=100mA
150
-
-
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA
-
0.1
0.3
V
Transistor frequency
f
T
V
CE
=5V, I
C
=50mA
-
260
-
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
5
-
pF
On resistance
R
ON
f=1KHz, I
B
=1mA, V
IN
=0.3V
-
0.6
-
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