KST-3065-000
1
STD123U
NPN Silicon Transistor
1
2
Features
Low saturation medium current application
Extremely low collector saturation voltage
Suitable for low voltage large current drivers
High DC current gain and large current capability
Low on resistance : R
ON
=0.6(Max.) (I
B
=1mA)
Ordering
Information
Type NO. Marking Package Code
STD123U 123 SOT-323
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Emitter
3. Collector
3
2.10.1
1.250.05
2.
0
0.
2
0.
30
0.
1
0.1 Min.
1.
30
0.
1
0.
90
0.
1
0.
15
0.
05
0~0.
1
1
2
KST-3065-000
2
STD123U
Absolute maximum ratings
(Ta=25
C)
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
20 V
Collector-Emitter voltage
V
CEO
15 V
Emitter-Base voltage
V
EBO
6.5 V
Collector current
I
C
1 A
Collector dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150 C
Electrical Characteristics
(Ta=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=50A, I
E
=0
20 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0 15
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=50A, I
C
=0
6.5 - - V
Collector cut-off current
I
CBO
V
CB
=20V, I
E
=0 -
-
0.1
A
Emitter cut-off current
I
EBO
V
EB
=6V, I
C
=0 -
-
0.1
A
DC current gain
h
FE
V
CE
=1V, I
C
=100mA 150
-
-
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA -
0.1
0.3
V
Transistor frequency
f
T
V
CE
=5V, I
C
=50mA -
260
-
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
5
-
pF
On resistance
R
ON
f=1KHz,
I
B
=1mA, V
IN
=0.3V - 0.6 -
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