KST-3064-000
1
STD123UF
NPN Silicon Transistor
Features
Low saturation medium current application
Extremely low collector saturation voltage
Suitable for low voltage large current drivers
High DC current gain and large current capability
Low on resistance : R
ON
=0.6(Max.) (I
B
=1mA)
Ordering
Information
Type NO. Marking Package Code
STD123UF 123 SOT-323F
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Emitter
3. Collector
1
2
3
2.10.1
1.300.1
0.
30~0.
40
1.
30 BSC
2.
0
0.
1
0.
11
0.
05
0.
70-
0.
15
0~0.
1
+0.
1
KST-3064-000
2
STD123UF
Absolute maximum ratings
(Ta=25
C)
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
20 V
Collector-Emitter voltage
V
CEO
15 V
Emitter-Base voltage
V
EBO
6.5 V
Collector current
I
C
1 A
Collector dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150 C
Electrical Characteristics
(Ta=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=50A, I
E
=0
20 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0 15
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=50A, I
C
=0
6.5 - - V
Collector cut-off current
I
CBO
V
CB
=20V, I
E
=0 -
-
0.1
A
Emitter cut-off current
I
EBO
V
EB
=6V, I
C
=0 -
-
0.1
A
DC current gain
h
FE
V
CE
=1V, I
C
=100mA 150
-
-
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=500mA, I
B
=50mA -
0.1
0.3
V
Transistor frequency
f
T
V
CE
=5V, I
C
=50mA -
260
-
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
5
-
pF
On resistance
R
ON
f=1KHz,
I
B
=1mA, V
IN
=0.3V - 0.6 -
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