KST-B019-000
1
STD13003
NPN Silicon Power Transistor
Features
High speed switching
V
CEO(sus)
=400V
Suitable for Switching Regulator and Motor Control
Ordering
Information
Type NO. Marking Package Code
STD13003 STD13003 MPT
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Collector
3. Emitter
2.50.1
.
1
6.50.2
1.2 Max.
5.00.2
3.
4
0.
2
21.
5
1.
0
2.
0
0.
1
0.
5
0.
2
1.
1
0.
1
8.
5
0.
2
12.
5 Min.
0.4~0.6
0.70 Max.
2 3
KST-B019-000
2
STD13003
Absolute maximum ratings
(Tc=25)
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
700 V
Collector-Emitter voltage
V
CEO
400 V
Emitter-base voltage
V
EBO
9 V
Collector current (DC)
I
C
1.5 A
Collector current (Pulse)
I
CM
3 A
Base current (DC)
I
B
0.75 A
Total Power dissipation (Ta=25)
P
C
1.2 W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150 C
Electrical Characteristics
(Tc=25)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-Emitter sustaining voltage
V
CE(sus)
I
C
=5mA, I
B
=0 400
-
-
V
Emitter cut-off current
I
EBO
V
EB
=9V, I
C
=0 -
-
10
uA
I
C
=0.5A, V
CE
=2V 8
-
40
DC Current gain
h
FE
*
I
C
=1A, V
CE
=2V 5
-
-
I
C
=0.5A, I
B
=0.1A -
-
0.5
I
C
=1A, I
B
=0.25A -
-
1
Collector-Emitter saturation voltage
V
CE(sat)
*
I
C
=1.5A, I
B
=0.5A -
-
3
V
I
C
=0.5A, I
B
=0.1A -
-
1
Base-Emitter saturation voltage
V
BE(sat)
*
I
C
=1A, I
B
=0.25A -
-
1.2
V
Transition frequency
f
T
V
CB
=10V, I
C
=0.1A, f=1MHz
4
-
-
MHz
Output capacitance
C
ob
V
CB
=10V, I
E
=0, f=0.1MHz
-
21
-
pF
Turn on Time
t
on
-
-
1.1
Storage Time
t
stg
-
-
4
Fall Time
t
f
V
CC
=125V,I
C
=1A
I
B1
=-I
B2
=0.2A
- - 0.7
* Pulse test: PW300 , Duty cycle2% Pulse
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