KST-8006-001
1
STD1766
NPN Silicon Transistor
Descriptions
Medium power amplifier
Features
P
C
(Collector dissipation)=2W (Ceramic substate of 40
40
0.8mm used)
Low collector saturation voltage : V
CE(sat)
=0.5V(Typ.)
Complementary pair with STB1188
Ordering
Information
Type NO.
Marking
Package Code
STD1766
B2
SOT-89
: h
FE
rank, monthly code
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Collector
3. Emitter
4.0
0.50
0.1
1.
82
0.
05
0~0.
1
1.
5
-0.
1
+0.
2
3
1
2
4.
5
-0.3
+0.5
2.5
-0.3
+0.2
1.00
0.3
-0.
1
+0.
2
0.
52
0.
05
0.
42
0.
05
0.
42
-0.
02
+0.
04
0.
15 T
y
p
.
KST-8006-001
2
STD1766
Absolute maximum ratings
(Ta=25
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
40 V
Collector-Emitter voltage
V
CEO
32 V
Emitter-Base voltage
V
EBO
5 V
Collector current
I
C
2 A
P
C
0.5
Collector dissipation
P
C
*
2
W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
* : When mounted on 40
40
0.8mm ceramic substate
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol Test
Condition Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=50
A, I
E
=0
40 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0 32
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=50
A, I
C
=0
5 - - V
Collector cut-off current
I
CBO
V
CB
=20V, I
E
=0 -
-
1
A
Emitter cut-off current
I
EBO
V
EB
=4V, I
C
=0 -
-
1
A
DC current gain
h
FE
*
V
CE
=3V, I
C
=0.5A 100
-
320
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=2A, I
B
=200mA -
0.5
0.8
V
Transition frequency
f
T
V
CB
=5V, I
C
=500mA -
100
-
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
30
-
pF
* : h
FE
rank / O : 100~200, Y : 160~320
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