KST-D003-000
1
STD882D
NPN Silicon Transistor
2
Description
Suitable for low voltage large current drivers
Excellent h
FE
Linearity
Complementary pair with STB772D
Switching Application
Features
Low collector saturation voltage V
CE(sat)
=0.4V(Max.)
Ordering
Information
Type NO.
Marking
Package Code
STD882D
STD882
D-PAK
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
PIN Connections
1. Base
2. Collector
3. Emitter
KST-D003-000
2
STD882D
Absolute maximum ratings
(Ta=25
C)
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
40 V
Collector-Emitter voltage
V
CEO
15 V
Emitter-Base voltage
V
EBO
7 V
Collector current(DC)
I
C(DC)
5 A
Collector current(Pulse) *
I
C(Pulse)
* 8 A
Collector dissipation
P
C
15 W
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150 C
* Pulse Test : Pulse Width=10ms (Max.), Duty Cycle=30%(Max.)
Electrical Characteristics
(Ta=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=50A, I
E
=0
40 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0 15
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=50A, I
C
=0
7 - - V
Collector cut-off current
I
CBO
V
CB
=30V, I
E
=0 -
-
0.1
A
Emitter cut-off current
I
EBO
V
EB
=5V, I
C
=0 -
-
0.1
A
h
FE
1
V
CE
=2V, I
C
=0.5A 160
-
320
-
DC current gain
h
FE
2
V
CE
=2V, I
C
=2A 100
-
-
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=3A, I
B
=100mA -
-
0.4
V
Transition frequency
f
T
V
CE
=6V, I
E
=-50mA -
150
-
MHz
Collector output capacitance
C
ob
V
CB
=20V, I
E
=0, f=1MHz
-
-
50
pF
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