KSD-T6O001-000
1
STK0250D
Advanced Power MOSFET
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SWITCHING REGULATOR APPLICATIONS
Features
High Voltage : BV
DSS
=500V(Min.)
Low C
rss
: C
rss
=6.5pF(Typ.)
Low gate charge : Qg=8.5nC(Typ.)
Low R
DS(on)
: R
DS(on)
=3.3(Max.)
Ordering
Information
Type NO.
Marking
Package Code
STK0250D STK0250 D-PAK
Outline Dimensions unit :
mm
PIN Connections
1. Gate
2. Drain
3. Source
1 2 3
6.50~6.70
1.
18 Max.
5.10~5.50
7.
77~7.
97
1.
15 Max.
0.83 Max.
2.30 Typ.
2.30 Typ.
2.10~2.50
0.55 Max.
KSD-T6O001-000
2
STK0250D
Absolute maximum ratings
(Tc=25
C)
Characteristic Symbol
Rating
Unit
Drain-source voltage
V
DSS
500 V
Gate-source voltage
V
GSS
30
V
(Tc=25)
2.0 A
Drain current (DC)
I
D
(Tc=125)
1.7 A
Drain current (Pulsed)
*
I
DP
8.0 A
Drain Power dissipation
P
D
35 W
Avalanche current (Single)
I
AS
2.0 A
Single pulsed avalanche energy
E
AS
59 mJ
Avalanche current (Repetitive)
I
AR
2.0 A
Repetitive avalanche energy
E
AR
3.0 mJ
Junction temperature
T
J
150
Storage temperature range
T
stg
-55~150
C
* Limited by maximum junction temperature
Characteristic Symbol
Typ.
Max
Unit
Junction-case R
th(J-C)
-
3.57
Thermal
resistance
Junction-ambient R
th(J-a)
-
62.5
/W
KSD-T6O001-000
3
STK0250D
Electrical Characteristics
(Tc=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Drain-source breakdown voltage
BV
DSS
I
D
=250A, V
GS
=0
500 - - V
Gate-threshold voltage
V
GS(th)
I
D
=250A, V
DS
= V
GS
3.0 - 5.0 V
Drain-source leakage current
I
DSS
V
DS
=500V, V
GS
=0V -
-
1
A
Gate-source leakage
I
GSS
V
DS
=0V, V
GS
=30V
- -
100
nA
Drain-Source on-resistance
R
DS(ON)
V
GS
=10V, I
D
=1.0A -
3.1
3.4
Forward transfer admittance
g
fs
V
DS
=10V, I
D
=1.0A -
1.4
-
S
Input capacitance
Ciss -
268
402
Output capacitance
Coss
-
13
19.5
Reverse transfer capacitance
Crss
V
GS
=0V, V
DS
=25V, f=1MHz
- 6.5
9.8
pF
Turn-on delay time
t
d(on)
-
8.5
-
Rise time
t
r
-
10.2
-
Turn-off delay time
t
d(off)
-
19
-
Fall time
t
f
V
DD
=250V, V
GS
=10V
I
D
=2.0A, R
G
=25
- 10.2 -
ns
Total gate charge
Q
g
-
8.5
12.8
Gate-source charge
Q
gs
-
1.7
2.6
Gate-drain charge
Q
gd
V
DD
=250V, V
GS
=10V
I
D
=2.0A
- 3.0
4.5
nC
Source-Drain Diode Ratings and Characteristics
(Tc=25
C)
Characteristic Symbol
Test
Condition
Min
Typ
Max
Unit
Continuous source current
I
S
-
-
2
Source current (Pulsed)
I
SP
Integral reverse diode
in the MOSFET
- - 8
A
Forward voltage
V
SD
V
GS
=0V, I
S
=2.0A -
-
1.4
V
Reverse recovery time
t
rr
-
200
-
ns
Reverse recovery charge
Q
rr
I
s
=2.0A, V
GS
=0V
di
s
/dt=100A/us
-
0.7 -
uC
Note ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=26.5mH, I
AS
=2.0A, V
DD
=50V, R
G
=25
Pulse Test : Pulse Width 300us, Duty cycle 2%
Essentially independent of operating temperature
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