KST-9061-001
1
STN2222
NPN Silicon Transistor
Descriptions
General purpose application
Switching application
Features
Large collector current
Low collector saturation voltage
Complementary pair with STN2907
Ordering
Information
Type NO. Marking Package Code
STN2222 STN2222 TO-92
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
4.5
0.1
4.
5
0.
1
0.4
0.02
1.27 Typ
.
2.54 Typ
.
1 2 3
3.45
0.1
2.25
0.1
2.06
0.1
1.
20
0.
1
0.
38
PIN Connections
1. Emitter
2. Base
3. Collector
14.
0
0.
40
KST-9061-001
2
STN2222
Absolute maximum ratings
Ta=25
C
Characteristic Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
60 V
Collector-Emitter voltage
V
CEO
30 V
Emitter-base voltage
V
EBO
5 V
Collector current
I
C
600
mA
Collector dissipation
P
C
625
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
-55~150
C
Electrical Characteristics
Ta=25
C
Characteristic
Symbol Test
Condition Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=10
A, I
E
=0
60 - - V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=10mA, I
B
=0 30
-
-
V
Emitter-Base breakdown voltage
BV
EBO
I
E
=10
A, I
C
=0
5 - - V
Collector cut-off current
I
CBO
V
CB
=60V, I
E
=0 -
-
10
nA
DC current gain
h
FE
V
CE
=10V, I
C
=10mA 75
-
-
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=150mA, I
B
=15mA -
-
0.4
V
Transistor frequency
f
T
V
CE
=20V, I
C
=20mA 250
-
-
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
6.0
-
pF
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