KST-9013-000
1
STS8550
PNP Silicon Transistor
Descriptions
High current application
Radio in class B push-pull operation
Feature
Complementary pair with STS8050
Ordering
Information
Type NO.
Marking
Package Code
STS8550
STS8550
TO-92
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
4.5
0.1
4.
5
0.
1
0.4
0.02
1.27 Typ
.
2.54 Typ
.
1 2 3
3.45
0.1
2.25
0.1
2.06
0.1
1.
2
0
0.
1
0.
3
8
PIN Connections
1. Emitter
2. Base
3. Collector
14.
0
0.
40
KST-9013-000
2
STS8550
Absolute maximum ratings
(Ta=25
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
-30
V
Collector-Emitter voltage
V
CEO
-25
V
Emitter-Base voltage
V
EBO
-6
V
Collector current
I
C
-800
mA
Emitter current
I
E
800
mA
Collector dissipation
P
C
625
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector-Base breakdown voltage
BV
CBO
I
C
=-500
A, I
E
=0
-30
-
-
V
Collector-Emitter breakdown voltage
BV
CEO
I
C
=-1mA, I
B
=0
-25
-
-
V
Collector cut-off current
I
CBO
V
CB
=-15V, I
E
=0
-
-
-50
nA
DC current gain
h
FE
*
V
CE
=-1V, I
C
=-50mA
85
-
300
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=-500mA, I
B
=-50mA
-
-
-0.5
V
Base-Emitter voltage
V
BE
V
CE
=-1V, I
C
=-500mA
-
-
-1.2
V
Transition frequency
f
T
V
CE
=-5V, I
C
=-10mA
-
120
-
MHz
Collector output capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
19
-
pF
* : h
FE
Rank / B : 85~160, C : 120~200, D : 160~300
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