KST-9015-000
1
STS9012
PNP Silicon Transistor
Description
General purpose application.
Switching application.
Features
Excellent h
FE
linearity.
Complementary pair with STS9013
Ordering
Information
Type NO.
Marking
Package Code
STS9012
STS9012
TO-92
Outline Dimensions unit :
mm
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
4.5
0.1
4.
5
0.
1
0.4
0.02
1.27 Typ
.
2.54 Typ
.
1 2 3
3.45
0.1
2.25
0.1
2.06
0.1
1.
2
0
0.
1
0.
3
8
PIN Connections
1. Emitter
2. Base
3. Collector
14.
0
0.
40
KST-9015-000
2
STS9012
Absolute maximum ratings
(Ta=25
C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
V
CBO
-40
V
Collector-Emitter voltage
V
CEO
-30
V
Emitter-Base voltage
V
EBO
-5
V
Collector current
I
C
-500
mA
Emitter current
I
E
500
mA
Collector dissipation
P
C
625
mW
Junction temperature
T
j
150
C
Storage temperature
T
stg
-55~150
C
Electrical Characteristics
(Ta=25
C)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Unit
Collector cut-off current
I
CBO
V
CB
=-35V, I
E
=0
-
-
-0.1
A
Emitter cut-off current
I
EBO
V
EB
=-5V, I
C
=0
-
-
-0.1
A
DC current gain
h
FE
*
V
CE
=-1V, I
C
=-50mA
96
-
246
-
Collector-Emitter saturation voltage
V
CE(sat)
I
C
=-100mA, I
B
=-10mA
-
-0.1
-0.25
V
Base-Emitter voltage
V
BE
V
CE
=-1V, I
C
=-100mA
-
-0.8
-1.0
V
Transistor frequency
f
T
V
CE
=-6V, I
C
=-20mA
150
-
-
MHz
Collector output capacitance
C
ob
V
CB
=-6V, f=1MHz
-
7
-
pF
* : h
FE
rank / F : 96~135, G : 118~166, H : 144~202, I : 176~246.
PDF 
ZIP