KST-J018-000
1
SUF622EF
N-Ch/P-Ch Enhancement-Mode MOSFET
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
Description
High speed switching application.
Analog switch application.
Features
STK1828 Chip and STJ828 Chip in SOT-563F Package
Low threshold voltage
High speed.
Ordering
Information
Type NO.
Marking
Package Code
SUF622EF
HX
SOT-563F
Outline Dimensions unit :
mm
PIN Connections
1. Source 1
2. Gate 1
3. Drain 2
4. Source 2
5. Gate 2
6. Drain1
4 5 6
3 2 1
Q1
Q2
KST-J018-000
2
SUF622EF
Absolute maximum ratings
(Ta=25
C)
Characteristic Symbol
Ratings
Unit
Drain-Source voltage
V
DS
20
-20 V
Gate-Source voltage
V
GSS
10
-7 V
DC Drain current
I
D
50
-50
mA
Drain Power dissipation
P
D
100
mW
Channel temperature
T
ch
150 C
Storage temperature range
T
stg
-55~150 C
Electrical Characteristics
(Q1:N-CH)
(Ta=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Drian-Source breakdown voltage
BV
DSS
I
D
=100A, V
GS
=0
20 V
Gate-Threshold voltage
V
th
I
D
=0.1mA, V
DS
=3V 0.5
1.5
V
Drain cut-off current
I
DSS
V
DS
=20V, V
GS
=0
1
A
Gate leakage current
I
GSS
V
GS
=10V, V
DS
=0
1
A
Drain-Source on-resistance
R
DS(ON)
V
GS
=2.5V, I
D
=10mA
20
40
Forward transfer admittance
Y
fs
V
DS
=3V, I
D
=10mA 20
mS
Input capacitance
C
iss
V
DS
=3V, V
GS
=0, f=1MHz
5.5
pF
Output capacitance
C
oss
V
DS
=3V, V
GS
=0, f=1MHz
6.5
pF
Reverse Transfer capacitance
C
rss
V
DS
=3V, V
GS
=0, f=1MHz
1.6
pF
Turn-on time
t
on
V
DD
=3V, I
D
=10mA
V
GEN
=0~2.5V
0.14
Turn-off time
t
off
V
DD
=3V, I
D
=10mA
V
GEN
=0~2.5V
0.14
Electrical Characteristics
(Q2:P-CH)
(Ta=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Drian-Source breakdown voltage
BV
DSS
I
D
=-100A, V
GS
=0
-20 V
Gate-Threshold voltage
V
th
I
D
=-0.1mA, V
DS
=-3V -0.5
-1.5
V
Drain cut-off current
I
DSS
V
DS
=-20V, V
GS
=0
-1
A
Gate leakage current
I
GSS
V
GS
=-7V, V
DS
=0
-1
A
Drain-Source on-resistance
R
DS(ON)
V
GS
=-2.5V, I
D
=-10mA
20
40
Forward transfer admittance
Y
fs
V
DS
=-3V, I
D
=-10mA 15
mS
Input capacitance
C
iss
V
DS
=-3V, V
GS
=0, f=1MHz
10.4
pF
Output capacitance
C
oss
V
DS
=-3V, V
GS
=0, f=1MHz
8.4
pF
Reverse Transfer capacitance
C
rss
V
DS
=-3V, V
GS
=0, f=1MHz
2.8
pF
Turn-on time
t
on
V
DD
=-3V, I
D
=-10mA
V
GEN
=0~-2.5V
0.15
Turn-off time
t
off
V
DD
=-3V, I
D
=-10mA
V
GEN
=0~-2.5V
0.13
PDF 
ZIP
