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Электронный компонент: SUR503EF

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KST-J003-003
1
SUR503EF
Epitaxial Planar Type NPN Silicon Transistor
R
1
R
2
4.7K
47K
4.7K
47K
Tr1
Tr2
Description
Digital transistor
Features
Two SRC1206 chips in SOT-563F package
With built-in bias resistors
Ordering
Information
Type NO.
Marking
Package Code
SUR503EF
HH
SOT-563F

Outline Dimensions unit :
mm
PIN Connections
1. Emitter 1
2. Base 1
3. Collector 2
4. Emitter 2
5. Base 2
6. Collector 1
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
Tr2
3 2
1
4 5
6
Tr1
R1
R2
R1
R2
KST-J003-003
2
SUR503EF

Absolute maximum ratings
(Tr1, Tr2)
Ta=25
C
Characteristic Symbol
Ratings
Unit
Out Voltage
V
O
50 V
Input Voltage
V
I
20 V
Out Current
I
O
100
mA
Power Dissipation
P
D
100
mW
Junction Temperature
T
J
150 C
Storage Temperature
T
STG
-55 ~ 150
C
Electrical Characteristics
(Tr1, Tr2 : PNP)
Ta=25
C
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Output Cut-off Current
I
O(OFF)
V
O
=50V, V
I
=0 -
-
500
nA
DC Current Gain
G
I
V
O
=5V, I
O
=10mA 80
200
-
-
Output Voltage
V
O(ON)
I
O
=10mA, I
I
=0.5mA -
0.1
0.3
V
Input Voltage (ON)
V
I(ON)
V
O
=0.2V, I
O
=5mA -
0.9
1.3
V
Input Voltage (OFF)
V
I(OFF)
V
O
=5V, I
O
=0.1mA 0.5
0.65
-
V
Transition Frequency
f
T
*
V
O
=10V, I
O
=5mA -
200
-
MHz
Input Current
I
I
V
I
=5V -
-
1.8
mA
* : Characteristic of Transistor Only
KST-J003-003
3
SUR503EF
Electrical Characteristic Curves
Tr1, Tr2 : NPN
Fig. 3 G
I
- I
O
Fig. 2 I
O
- V
I(OFF)
Fig. 1 I
O
- V
I(ON)