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KSD-T5P002-000
1
Descriptions
Complex type bipolar transistor
Features
Reduce quantity of parts and mounting cost
High collector power dissipation : P
C
=300mW(Max.)
Both 2SA1980 chip and 2SC5343 chip in SOT-26 Package
Ordering
Information
Type NO. Marking Package Code
SUT462N 3X SOT-26
Outline Dimensions unit :
mm
SUT462N
Epitaxial planar NPN/PNP silicon transistor
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
Tr1
Tr2
4 5 6
3 2 1
PIN Connections
1. Collector 1
2. Base 2
3. Emitter 2
4. Collector 2
5. Base 1
6.
Emitter 1
2.60~3.00
0.
95 T
y
p
.
1.50~1.70
0.
95 T
y
p
.
2.
80~3.
00
0.
45 Max.
1.
00~1.
20
0.
19 Max.
0.
10 Max.
0.40 Min.
1
6
5
4 3
2
Equivalent Circuit
KSD-T5P002-000
2
Absolute Maximum Ratings
[Tr1, Tr2] (Ta=25
C)
Rating
Characteristic Symbol
Tr1 Tr2
Unit
Collector-base voltage
V
CBO
60
-50 V
Collector-emitter voltage
V
CEO
50
-50 V
Emitter-base voltage
V
EBO
5
-5 V
Collector current
I
C
150
-150
mA
Collector power dissipation
P
C
300 mW
Junction temperature
T
J
150 C
Storage temperature range
T
stg
-55~150 C
: Total rating
Electrical Characteristics
[Tr1] (Ta=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BV
CEO
I
C
=1mA, I
B
=0 50
-
-
V
Collector cut-off current
I
CBO
V
CB
=60V, I
E
=0 -
-
0.1
A
Emitter cut-off current
I
EBO
V
EB
=5V, I
C
=0 -
-
0.1
A
DC current gain
h
FE
V
CE
=6V, I
C
=2mA 120
-
400
-
Collector-emitter saturation voltage
V
CE(sat)
I
C
=100mA, I
B
=10mA -
-
0.25
V
Base-emitter voltage
V
BE
V
CE
=6V, I
C
=2mA -
0.65
-
V
Transition frequency
f
T
V
CE
=10V, I
C
=10mA -
200
-
MHz
Collector output capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
2
-
pF
Electrical Characteristics
[Tr2] (Ta=25
C)
Characteristic Symbol
Test
Condition
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BV
CEO
I
C
=-1mA, I
B
=0 -50
-
-
V
Collector cut-off current
I
CBO
V
CB
=-50V, I
E
=0 -
-
-0.1
A
Emitter cut-off current
I
EBO
V
EB
=-5V, I
C
=0 -
-
-0.1
A
DC current gain
h
FE
V
CE
=-6V, I
C
=-2mA 120
-
400
-
Collector-emitter saturation voltage
V
CE(sat)
I
C
=-100mA, I
B
=-10mA -
-
-0.3
V
Base-emitter voltage
V
BE
V
CE
=-6V, I
C
=-2mA -
-0.65
-
V
Transition frequency
f
T
V
CE
=-10V, I
C
=-10mA -
200
-
MHz
Collector output capacitance
C
ob
V
CB
=-10V, I
E
=0, f=1MHz
-
4
-
pF
SUT462N
KSD-T5P002-000
3
Electrical Characteristic Curves
Fig. 4 V
CE(sat)
-I
C
Fig. 3 h
FE
-I
C
Fig. 2 I
C
-V
CE
Fig. 1 I
C
-V
BE
SUT462N
Fig. 1 I
C
-V
BE
[Tr1]
Fig. 2 I
C
-V
CE
[Tr2]
KSD-T5P002-000
4
Electrical Characteristic Curves
SUT462N
Fig. 4 V
CE(sat)
-I
C
Fig. 3 h
FE
-I
C
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
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