Preliminary
TARF1510U
DESCRIPTION
The TARF1510U is a low Noise figure and good associated
gain performance at UHF,VHF and Microwave frequencies
It is suitable for a high density surface mount since
transistor has been SOT323 package
FEATURES
o Low Noise Figure
N.F = 1.5dB TYP. @ f=2GHz, V
CE
=3V, Ic=7mA
N.F = 1.7dB TYP. @ f=2GHz, V
CE
=1V, Ic=3mA
o High Gain
MAG = 9dB TYP. @ f=2GHz, V
CE
=3V, Ic=20mA
MAG = 6dB TYP. @ f=2GHz, V
CE
=1V, Ic=3mA
o High Transition Frequency
f
T
= 7GHz TYP. @ f=2GHz, V
CE
=3V, Ic=20mA
f
T
= 4GHz TYP. @ f=2GHz, V
CE
=1V, Ic=3mA
PIN CONFIGURATION
MARKING : AK1
MAXIMUM RATINGS
V
CBO
Collector-Base Voltage
Open Emitter
V
CEO
Collector-Emitter Voltage
Open Base
V
EBO
Emitter-Base Voltage
Open Collector
Ic
Collector Current (DC)
P
T
Total Power Dissipation
Ts = 60
T
STG
Storage Temperature
T
J
Operating Junction Temperature
PIN NO
SYMBOL
DESCRIPTION
Unit
1
2
3
B
E
C
150
-65 ~ 150
SYMBOL
PARAMETER
CONDITION
VALUE
Base
Emitter
Collector
mW
150
V
V
15
5.5
2.5
100
V
mA
NPN Planer RF TRANSISTOR
SOT-323 unit : mm
www.tachyonics.co.kr
- 1/12 -
Oct-2002
Preliminary
TARF1510U
Electrical Characteristics ( T
A
= 25
)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Cut-off current
Emitter-Cut-off current
D.C current Gain
Transition Frequency
Collector-Base Capacitance
Performance Characteristics
dB
6
dB
Minium Noise Figure
V
CE
=3V, Ic=7mA,f=2GHz
1.5
V
CE
=3V, Ic=20mA,f=2GHz
7
7.5
dB
dB
rn
Noise Resistance
V
CE
=1V, Ic=3mA,f=2GHz
V
CE
=3V, Ic=7mA,f=2GHz
0.06
0.07
NFmin
[S21]
2
V
CE
=3V, Ic=7mA,f=2GHz
V
CE
=1V, Ic=3mA,f=2GHz
V
CE
=3V, Ic=20mA,f=2GHz
Insertion Power Gain
MAG
GHz
8.5
10
3
Associated Gain
V
CE
=1V, Ic=3mA,f=2GHz
V
CE
=1V, Ic=10mA,f=2GHz
pF
Unit
min
typ
max
VALUE
VALUE
V
CE
= 3V, Ic = 15mA
300
100
150
max
V
CB
= 10V, f = 1MHz
0.8
SYMBOL
7
I
CE
= 100uA, I
E
= 0
I
CE
= 100uA, I
B
= 0
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
PARAMETER
CONDITION
SYMBOL
V
CBO
V
CEO
I
CBO
I
EBO
hfe
f
T
C
CB
4.5
8.5
9
6
6.5
1.7
G
A
typ
V
CE
=1V, Ic=10mA,f=2GHz
V
CE
=1V, Ic=3mA,f=2GHz
5.5
V
CE
= 3V, Ic = 20mA
Unit
10
5
25
5.5
V
V
min
n A
n A
V
CE
=3V, Ic=7mA,f=2GHz
V
CE
=3V, Ic=7mA,f=2GHz
100
V
CE
=3V, Ic=20mA,f=2GHz
CONDITION
V
CE
=3V, Ic=7mA,f=1GHz
V
CE
=3V, Ic=20mA,f=1GHz
Maximum Available Gain
PARAMETER
www.tachyonics.co.kr
- 2/12 -
Oct-2002
Preliminary
TARF1510U
Power Gain : Gmax vs. Icc
Power Gain : Gmax vs. Icc
Power Gain : Gmax vs. Frequency
Power Gain : S
21
vs. Frequency
0
2
4
6
8
10
0
10
20
30
40
50
60
Icc [mA]
Gmax [dB]
6
8
10
12
14
16
0
10
20
30
40
50
60
Icc [mA]
Gmax [dB]
0.5
1.0
1.5
2.0
2.5
0.0
3.0
6
8
10
12
14
16
18
20
4
22
freq, GHz
Ma
x
G
a
i
n
1
0.5
1.0
1.5
2.0
2.5
0.0
3.0
0
2
4
6
8
10
12
14
16
18
-2
20
freq, GHz
d
B
(S
(2,1
)
)
V
CE
=3V
V
CE
=2V
V
CE
=1V
f = 1GHz
V
CE
=3V
Icc=20mA
V
CE
=1V
Icc=15mA
Gmax [dB]
S21[dB]
V
CE
=3V
Icc=20mA
V
CE
=1V
Icc=15mA
V
CE
=3V
V
CE
=2V
V
CE
=1V
f = 2GHz
www.tachyonics.co.kr
- 4/12 -
Oct-2002
Preliminary
TARF1510U
C
CB
vs. V
CB
Fmin vs. Icc
Noise Figure Contours & Constant Gain
V
CE
= 3V, Icc = parameter, Zs = Zsopt
f = 1 GHz,
2GHz
, V
CE
= 3V, Icc = 7mA
Transition Frequency : f
T
vs. Icc
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
40
50
60
Icc [mA]
f
T
[GHz]
0.5
1
1.5
2
2.5
3
0
5
10
15
20
25
30
Icc [mA]
Fmin [dB]
0
0.4
0.8
1.2
1.6
2
0
3
6
9
12
15
V
CB
[V]
Capacitance C
CB
[pF]
f = 1MHz
f = 1GHz
OPT
=0.378162
Fmin =1.05dB
=1.1dB
=1.2dB
3 contour
Input Stable
Output Stable
Ga=10dB
=11dB
=12dB
3contour
f = 1GHz
V
CE
=3V
V
CE
=2V
V
CE
=1V
f = 2GHz
f = 2GHz
f = 2GHz
OPT
=0.623-154
Fmin =1.45dB
=1.5dB
=1.6dB
3 contour
Ga=8dB
=7dB
=6dB
3contour
www.tachyonics.co.kr
- 5/12 -
Oct-2002
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