850nm
wavelength
range
High
wavelength
uniformity
1x4 and 1X12
arrays
Low threshold
current
Data rates up to
12.5 Gbps
Common cathode
and common anode
configurations
F e a t u r e s
Ordering information
Part Number
Description
APA4901040000
1x4 array
common cathode
APA4901120000
1x12 array
common cathode
APA4601040000
1x4 array
common anode
APA4601120000
1x12 array
common anode
125m 125m 125m
160m
45m
45m
light emitting
aperture
cathode
anode
cathode
N x 10 Gbps
Multi-Mode
VCSEL Array
March 2003
Preliminary Datasheet
Avalon Photonics Ltd, Badenerstrasse 569
8048 Zurich, Switzerland
Tel: +41 1 498 1411 Fax: +41 1 498 1412
Email: vcsel@avap.ch
Internet: www.avalon-photonics.com
E l e c t r o - o p t i c a l c h a r a c t e r i s t i c s
( f o r i n d i v i d u a l l a s e r s )
Parameter*
Symbol
Conditions
Ratings
Units
Min Typ Max
Threshold current
I
th
0.5
1
1.5
mA
Optical output power
P
out
l
op
= 8 mA
2.5
mW
Operating voltage
V
op
l
op
= 8 mA
1.9
V
Emission wavelength
840
850
860
nm
Spectral bandwidth, RMS
l
op
= 8 mA
0.45
nm
Slope efficiency
0.35
mW/mA
Beam divergence
Full width
1
/e
2
, I
op
= 8 mA
28
32
Differential resistance
R
Diff
l
op
= 8 mA
50
70
Relative intensity noise
RIN
12
(OMA)
l
op
= 8 mA
-128
dB/Hz
Bandwidth
f
3dB
l
op
= 8 mA
10
GHz
*(T=25C unless otherwise noted)
The above specifications are subject to change
without notice
Parameter
Symbol
Ratings
Units
Min Typ Max
Temperature tuning coefficient
/
T
0.06
nm/K
Threshold current variation 0 to+70C
I
th
1
mA
T h e r m a l c h a r a c t e r i s t i c s
Parameter*
Rating
Units
Optical output power
8
mW
Peak forward current
15
mA
Electrical power dissipation
30
mW/laser
Reverse voltage
5
V
Operating temperature
0 to +85
C
Storage temperature
-40 to +100
C
A b s o l u t e m a x i m u m r a t i n g s
INVISIBLE LASER RADIATION
- AVOID DIRECT EXPOSURE
PEAK POWER : 4 mW
WAVELENGTH : 850 nm
CLASS IIIa LASER PRODUCT
N x 10 Gbps
Multi-Mode
VCSEL Array
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