1
.
9
0
.
9
5
0
.
9
5
2
.
9
0
.
4
1. 3
2. 4
1
.
0
SOT-23 Plastic-Encapsulate Transistors
MMBT3904LT1
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM:
0.2 W (Tamb=25
)
Collector current
I
CM:
0.2 A
Collector-base voltage
V
(BR)CBO
: 60 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic= 100
A, I
E
=0
60 V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic= 1 mA, I
B
=0 40
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
= 100
A, I
C
=0
6 V
Collector cut-off current
I
CBO
V
CB
= 60V, I
E
=0
0.1
A
Collector cut-off current
I
CEO
V
CE
= 40V, I
B
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 5V, I
C
=0
0.1
A
H
FE(1)
V
CE
=10V, I
C
=
1mA 100
300
DC current gain
H
FE(2)
V
CE
= 1V, I
C
= 50mA
60
Collector-emitter saturation voltage
V
CE
(sat) I
C
=50mA, I
B
= 5mA
0.3
V
Base-emitter saturation voltage
V
BE
(sat) I
C
= 50mA, I
B
= 5mA
0.95
V
Transition frequency
f
T
V
CE
= 20V, I
C
= 10mA
f=
100MHz
250 MHz
Delay Time
td
35 nS
Rise Time
tr
V
CC
=3.0Vdc, V
BE
=-0.5Vdc
I
C
=10mAdc, I
B1
=1.0mAdc
35 nS
Storage Time
ts
200 nS
Fall Time
tf
V
CC
=3.0Vdc, I
C
=10mAdc
I
B1
=I
B2
=1.0mAdc
50 nS
DEVICE MARKING
MMBT3904LT1=1AM
Unit: mm
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
@vic
Copyright @vic Electronics Corp. Website http://www.avictek.com
MMBT3904LT1
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