@vic
AV9014
Copyright Avic Electronics Corp.
1
Website:
http://www.avictek.com
TO-92 Plastic-Encapsulate Transistors
AV9014 TRANSISTOR NPN
FEATURES
Power dissipation
P
CM
: 0.4 WTamb=25
Collector current
I
CM
: -0.1 A
Collector-base voltage
V
(BR)CBO
: 50 V
Operating and storage junction temperature range
T
J
T
stg
: -55 to +150
ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 100
A I
E
=0
50
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= 0. 1 mA I
B
=0
45
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 100
A I
C
=0
5
V
Collector cut-off current
I
CBO
V
CB
=50 V , I
E
=0
0.1
A
Collector cut-off current
I
CEO
V
CE
=35 V , I
B
=0
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 3 V I
C
=0
0.1
A
DC current gain
H
FE
V
CE
= 5 V, I
C
= 1mA
60
1000
Collector-emitter saturation voltage
V
CE
(sat) I
C
= 100mA, I
B
= 5 mA
0.3
V
Base-emitter saturation voltage
V
BE
(sat) I
C
= 100 mA, I
B
= 5mA
1
V
Transition frequency
f
T
V
CE
= 5 V, I
C
= 10mA
f =
30MHz
150 MHz
CLASSIFICATION OF HFE
Rank
A
B
C
D
Range
60-150 100-300
200-600
400-1000
1
2
3
TO--92
1. EMITTER
2. BASE
3.COLLECTOR
@vic
AV9014
Copyright Avic Electronics Corp.
2
Website:
http://www.avictek.com
Typical Characteristics
I
C
[m
A]
, Collector Current
V
CE
[V], Collector-Emitter Voltage
Figure 1. Static Characteristic
fT[M
Hz]
,
Current Gain-Bandwidth
Product
V
BE
(sat), V
CE
(sat)[V]
,
Satu
ratio
n
Vo
ltag
e
hFE, DC
C
u
rrent
Gai
n
I
B
=160A
I
C
[mA], Collector Current
Figure 2. DC current Gain
I
C
[mA], Collector Current
Figure 4. Current Gain Bandwidth Product
I
C
[mA], Collector Current
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
I
B
=140A
I
B
=120A
I
B
=100A
I
B
=80A
I
B
=60A
50
40
30
20
10
0
0
10
20
30
40
50
1000
100
10
10
100
1000
V
CE
= 5V
1000
100
10
10
100
1000
V
BE
(sat)
V
CE
(sat)
I
C
=10I
B
V
CE
= 5V
1000
100
10
1
10
100
1000
I
B
=40A
I
B
=20A
60
70
80
90
100
1
1
PDF 
ZIP