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Электронный компонент: XL1225

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AVIC TECHNOLOGY CO.,LTD.
TO-92 Plastic-Encapsulate Transistors


XL1225
Silicon Planar pnpn Thyristor

FEATURES
Current-I
GT
: 120
A

I
TRMS
: 0.6 A

V
DRM
: 400 V

Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter Symbol
Test
conditions
MIN
MAX
UNIT
On state voltage
V
TM
I
TM
=0.6A
1.7
V
Gate trigger voltage
V
GTF
V
AK
=7V
0.8
V
Repetitive peak off-state voltage
V
DRM
I
DRM
= 10A
400
V
Holding current
I
H
I
HL
= 20mA , Av = 7 V
5
mA
A2 5
15
A
A1 15
30
A
A-1 30
45
A
A-2 45
60
A
A 60
80
A
Gate trigger current
I
GTF
B
V
AR
=7V
80 120 A

1
2
3

TO-92
1. CATHODE
2. GATE
3. ANODE