Continental Device India Limited
Data Sheet
Page 1 of 3
TIP31, 31A, 31B, 31C
NPN PLASTIC POWER TRANSISTORS
TIP32, 32A, 32B, 32C
PNP PLASTIC POWER TRANSISTORS
General Purpose Amplifier and Switching Applications
ABSOLUTE MAXIMUM RATINGS
31 31A 31B 31C
32 32A 32B 32C
Collector-base voltage (open emitter)
V
CBO
max. 40
60
80
100
V
Collector-emitter voltage (open base)
V
CEO
max. 40
60
80
100
V
Collector current
I
C
max.
3.0
A
Total power dissipation up to T
C
= 25C P
tot
max.
40
W
Junction temperature
T
j
max.
150
C
Collector-emitter saturation voltage
I
C
= 3 A; I
B
= 375 mA
V
CEsat
max.
1.2
V
D.C. current gain
I
C
= 3 A; V
CE
= 4 V
h
FE
min.
10
max.
50
RATINGS (at T
A
=25C unless otherwise specified)
Limiting values
31 31A 31B 31C
32 32A 32B 32C
Collector-base voltage (open emitter)
V
CBO
max. 40
60
80
100
V
Collector-emitter voltage (open base)
V
CEO
max. 40
60
80
100
V
Emitter-base voltage (open collector)
V
EBO
max.
5.0
V
TIP31, TIP31A, TIP31B, TIP31C
TIP32, TIP32A, TIP32B, TIP32C
PIN CONFIGURATION
1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
B
1 2
3
J
M
G
D
H
A
O
O
K
N
L
F
E
C
D IM
M IN .
M A X.
A
l
l
di
m
i
ns
i
ons
i
n
m
m
.
A
14.42
16.51
B
9.63
10.67
C
3.56
4.83
D
0.90
E
1.15
1.40
F
3.75
3.88
G
2.29
2.79
H
2.54
3.43
J
0.56
K
12.70
14.73
L
2.80
4.07
M
2.03
2.92
N
31.24
O
D E G 7
1
2
3
4
IS / IECQC 700000
IS / IECQC 750100
IS/ISO 9002
Lic# QSC/L- 000019.2
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
TO-220 Plastic Package
http://www.bocasemi.com page: 1
Boca Semiconductor Corp. (BSC)
Continental Device India Limited
Data Sheet
Page 2 of 3
Collector current
I
C
max.
3.0
A
Collector current (Peak)
I
CM
max.
5.0
A
Base current
I
B
max.
1.0
A
Total power dissipation upto T
C
=25C P
tot
max.
40
W
Derate above 25C
max
0.32
W/C
Total power dissipation upto T
A
=25C P
tot
max.
2
W
Derate above 25C
max
0.016
W/C
Junction temperature
T
j
max.
150
C
Storage temperature
T
stg
65 to +150
C
THERMAL RESISTANCE
From junction to case
R
th jc
3.125
C/W
From junction to ambient
R
th ja
62.5
C/W
CHARACTERISTICS
T
amb
= 25C unless otherwise specified
31 31A 31B 31C
32 32A 32B 32C
Collector cutoff current
I
B
= 0; V
CE
= 30V
I
CEO
max. 0.3 0.3
mA
I
B
= 0; V
CE
= 60V
I
CEO
max.
0.3
0.3
mA
V
BE
= 0; V
CE
= V
CEO(max)
I
CES
max.
0.2
mA
Emitter cut-off current
I
C
= 0; V
EB
= 5 V
I
EBO
max.
1.0
mA
Breakdown voltages
I
C
= 30 mA; I
B
= 0
V
CEO(sus)
*
min. 40
60
80
100
V
I
C
= 1 mA; I
E
= 0
V
CBO
min. 40
60
80
100
V
I
E
= 1 mA; I
C
= 0
V
EBO
min.
5.0
V
Saturation voltage
I
C
= 3 A; I
B
= 375 mA
V
CEsat
*
max.
1.2
V
Base emitter on voltage
I
C
= 3 A; V
CE
= 4 V
V
BE(on)
*
max.
1.8
V
D.C. current gain
I
C
= 1 A; V
CE
= 4 V
h
FE
*
min.
25
I
C
= 3 A; V
CE
= 4 V
h
FE
*
min.
10
max.
50
Small-signal current gain
I
C
= 0.5A; V
CE
= 10V; f = 1 KHz
|h
fe
|
min.
20
Transition frequency
I
C
= 0.5A; V
CE
= 10V; f = 1 MHz f
T
(1)
min.
3
MHz
* Pulse test: pulse width
300 s; duty cycle
2%.
(1) f
T
= |h
fe
| f
test
TIP31, TIP31A, TIP31B, TIP31C
TIP32, TIP32A, TIP32B, TIP32C
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