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Электронный компонент: P35-1110-1

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www.bookham.com
Bookham Technology 2002 Bookham is a registered trademark of Bookham Technology plc
Bookham Technology, Caswell, Towcester, Northants, NN12 8EQ
Tel: +44 (0)1327 356283
Fax: +44 (0)1327 356698
RFSales@Bookham.com
467/SM/00147/200 Issue1/1
22735
MESFET for OPTO
Receivers
Performance Optimised to provide
high gm and low gate leakage
Features
General purpose amplifier in PIN FET receiver
Transimpedance amplifier for wide band PIN FET
receiver
High gm, typically 45mS
Low gate leakage current, typically 10nA at -5 Volts
No selection required
Low Cgs, typically 0.4pF
Simplified bonding
Description
The P35-1110 is a high performance MESFET optimised for high gm and low gate leakage. This
performance makes the device suitable for use in opto receivers and as a Transimpedance amplifier for
use in wide band PIN FET receivers. It is available as either a chip or in a MICRO-X package.
The die is fabricated using Bookham's Gallium Arsenide FET process. It is fully protected using Silicon
Nitride passivation for excellent performance and reliability.
Electrical Performance
Ambient temperature = 22 3 Deg C , Vd = 3V
Parameter
Condition
Min
Typ
Max
Units
Drain Current Idss
Vds = 3V, Vgs = 0V
20
35
60
mA
Pinch Off Voltage Vp
Vds = 3V, Igs = 100
A
-0.5
-1.0
-4.0
V
Transconductance gm
1
Vds = 3V, Ids = 10mA
40
45
50
mS
Gate to Source Leakage Igs
1
Vds = 0V, Vgs = -5V
Vds = 3V, Ids = 10mA
-
-
10
0.5
80
10
nA
nA
Notes
1.
Measured under dark conditions
www.bookham.com
Bookham Technology 2002 Bookham is a registered trademark of Bookham Technology plc
Bookham Technology, Caswell, Towcester, Northants, NN12 8EQ
Tel: +44 (0)1327 356283
Fax: +44 (0)1327 356698
RFSales@Bookham com
467/SM/00147/200 Issue1/1
22735
Typical Characteristics at 22

C
Ids v Vds Vgstep = -0.25V
0
20
40
60
0
1
2
3
Drain Voltage, Volts
Drain Current, mA
Gm v Ids Vds = 3.0V
20
40
60
80
0
10
20
30
40
Drain Current, mA
Transconductance, mS
Igs v Vgs Vds = O/C
0
3
6
9
-6
-4
-2
0
Gate Voltage, Volt s
Gate
Current,
nA
Igs v Ids Vds =3V
0
0.3
0.6
0.9
5
10
15
20
25
Drain Current, mA
Gate
Current,
nA
www.bookham.com
Bookham Technology 2002 Bookham is a registered trademark of Bookham Technology plc
Bookham Technology, Caswell, Towcester, Northants, NN12 8EQ
Tel: +44 (0)1327 356283
Fax: +44 (0)1327 356698
RFSales@Bookham com
467/SM/00147/200 Issue1/1
22735
Transconductance, Gm v Temp
36
38
40
42
44
46
48
50
-20
0
20
40
60
80
100
120
Temperature (Deg C)
Gm at 10mA, mS
0.055 mS/C
Gate Leakage (Ids=10mA) v Temp
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
0
-20
0
20
40
60
80
100 120
T em perature (Deg C)
Gate
Leakage,
n
A
www.bookham.com
Bookham Technology 2002 Bookham is a registered trademark of Bookham Technology plc
Bookham Technology, Caswell, Towcester, Northants, NN12 8EQ
Tel: +44 (0)1327 356283
Fax: +44 (0)1327 356698
RFSales@Bookham com
467/SM/00147/200 Issue1/1
22735
P35-1110-0 (Chip) Equivalent Circuit model
(Source bond wires included)
Element
Value*
Units
*Element values shown are at:-
V
DS
= 3V, I
DS
= 10mA
I
DS
= Gm Vce
-jwt
R
g
C
gs
R
i
C
dg
G
m
R
ds
C
ds
R
dg
R
s
R
d
L
s
3.8
0.36
4.9
0.038
46
401
0.08
7.8
4.5
4.36
0.065
4.0
pF
pF
mS
pF


nH
pS
Absolute maximum Ratings
Max Vds
+6.0V
Max Vgs
-6.0V
Operating temperature
-55C to 125C
Channel temperature
175C
Total power dissipation
350mW
Chip Mounting and Bonding
The back of the chip is metallized with Au-Ge and can be die-attached onto gold manually, eutectically with a
Au-Sn preform or with low temperature epoxy. The maximum allowable chip temperature is 280
C. The
chip is fully passivated with silicon nitride and should be bonded onto the exposed gold pads with 25 micron
diameter pure gold wire, 0.5 - 2.0% elongation. Bonding should be achieved with the chip face at 250-270
C
with a heated wedge (approx. 120
C) and a force of 25 grams. Ball bonds are not recommended as
resultant gold area can come too close to the channel vicinity, increasing the probability of device destruction
due to transients.
www.bookham.com
Bookham Technology 2002 Bookham is a registered trademark of Bookham Technology plc
Bookham Technology, Caswell, Towcester, Northants, NN12 8EQ
Tel: +44 (0)1327 356283
Fax: +44 (0)1327 356698
RFSales@Bookham com
467/SM/00147/200 Issue1/1
22735
Handling Precautions
The microwave FET can be damaged or destroyed if subject to large transient voltages, such as can be
generated by some bonding equipment power supplies when switched on, or if the output is shorted. It is
also possible to induce large spikes from other equipment into long unscreened bias leads
.
www.bookham.com
Bookham Technology 2002 Bookham is a registered trademark of Bookham Technology plc
Bookham Technology, Caswell, Towcester, Northants, NN12 8EQ
Tel: +44 (0)1327 356283
Fax: +44 (0)1327 356698
RFSales@Bookham com
467/SM/00147/200 Issue1/1
22735
Chip Outline
Chip size:
.420 x .380mm
Bond pad size:
100x150
m
100x110
m
Chip thickness:
150
m
Package Details
The leads of the package can be soldered to
microstrip circuitry using solders with melting points
below 170
C. Low melting point solders, such as
50Sn/50In, 80In/15Pb/5Ag and
37.5Sn/37.5Pb/25In are recommended. Silver
loaded epoxies can also be used and cured at
below 150
C for times of up to 2 hours.
Ablebond 89-1 LMIT silver loaded epoxy resin.
Manufactured by:
Ablestick Laboratories , 833 West 182
nd
Street,
Gardena , California 90248, USA
Recommended Bonding Configuration
Package Outline
www.bookham.com
Bookham Technology 2002 Bookham is a registered trademark of Bookham Technology plc
Bookham Technology, Caswell, Towcester, Northants, NN12 8EQ
Tel: +44 (0)1327 356283
Fax: +44 (0)1327 356698
RFSales@Bookham com
467/SM/00147/200 Issue1/1
22735
Ordering Information
P35-1110-0
Chip
P35-1110-1
Micro-X Package
IMPORTANT NOTICE
Bookham Technology has a policy of continuous improvement, as a result certain parameters detailed on this flyer may be subject to
change without notice. If you are interested in a particular product please request the latest product specification datasheet, available
from the Bookham Technology RF sales representative.