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Data
sheet
www.bookham.com
Thinking RF solutions
MMIC Broadband
Amplifier, 6- 18GHz
The P35-4140-000-200 is a high performance monolithic
broadband amplifier designed for use in a wide range of
applications including telecommunications, instrumentation
and electronic warfare. The amplifier gives typically 5.5dB
gain over the frequency range 6GHz to 18GHz. On chip input
and output blocking capacitors simplify assembly and allow
the amplifier to be cascaded easily.
The die is fabricated using Bookham Technology's F20
Gallium Arsenide MESFET MMIC process. It is fully
protected using Silicon Nitride passivation for excellent
performance and reliability.
Features
Broadband cascadable gain
block
AGC control with gate bias
15dBm output power typical
Noise Figure 5.5dB typical
On chip DC blocking capacitors
at input and output
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Thinking RF solutions
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Notes
1. At 50% Idss, which will be in the range 40-80mA.
2. Improved input return loss can be achieved at the bondwire/microstrip interface.
3. Gain control can be achieved with variation of Vg typically 5dB/vo
Parameter Conditions
Min
Typ
Max
Units
Small signal gain
1
6GHz - 18GHz
5.0
5.5
-
dB
Gain Flatness
6GHz - 18GHz
-
0.5
1.0
dB
Input Return Loss
2
6GHz - 14GHz
6.5
8
-
dB
14GHz - 18GHz
4.5
8
-
Output Return Loss
6GHz - 18GHz
10
15
-
dB
Noise figure
6GHz - 18GHz
-
5.5
7.0
dB
Output Power at 1dB Compression
6GHz
-
18.0
-
dBm
18GHz
14.0
15.0
-
Reverse Isolation
6GHz
-
25.0
-
dB
18GHz
-
14.0
-
dB
Gate Voltage Vg
3
For Id = 60mA
0
-0.6
-5
Volts
Drain Voltage Vd
+4.5
+5.0
+6.0
Volts
Electrical Performance
Ambient temperature = 22 3 Deg C , Zo = 50 ohms, Vd = 5V, Id = 50% Idss
Typical Performance at 22 C
Absolute Maximum Ratings
Max supply voltage
+6.0V
Max Vgs
-5.0V
Chip operating temperature
-55C to 125C
Storage temperature
-65C to +150
P35-4140-000-200
Gain
Noise Figure
Input Return Loss (dB)
Output Return Loss (dB)
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P35-4140-000-200
Operation
To operate the P35-4140-0, a drain supply of 5V is connected to pad 3. The amplifier circuit is
controlled by the voltage applied at pad 4 and should be set to give a drain current of 50%
Idss which will be in the range of 40-80mA, typically 60mA. The voltage required for this is
typically -0.6V. Gain control achieved with the variation of Vg is typically 5dB/volt at 50% Idss.
Improved input return loss (approx. 10dB) can be achieved at the bondwire/microstrip
interface once the die is mounted by the addition of an input microstrip transformer (see input
return loss plot). Decoupling capacitors of 470pF are required at the gate and drain bias
inputs. Additional drain decoupling with a 4.7 F capacitor is recommended. The RF
connections should be made with two wires (25 m diam), Maximum length 0.3mm at RF in
and a single wire, length 0.4mm at RF out.
See application note P35-41AN2 for more details. It is recommended that the die is mounted
with silver loaded epoxy and bonding to all pads is with 25 m diameter gold wire using
thermal compression bonding. Gain variation with temperature is typically 0.015dB/C
Die Outline
Pad Details
Pad
Function
1 RF
IN
2 RF
OUT
3 Drain
Voltage
Vd
4 Gate
Voltage
Vg
De bias connections
Bond Pad Configuration
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
Tel: +44 (0) 1327 356 789
Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
Chip size:
2.69 x 2.06mm
Bond pad size:
120 m square
Chip thickness:
200 m
Ordering Information
P35-4140-000-200
462/SM/00580/200 Issue 1/2
Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc