Data
sheet
www.bookham.com
Thinking RF solutions
Single Bit
Absorptive Step
Attenuator,
DC - 20GHz
The P35-4310-000-200 is a high performance Gallium
Arsenide monolithic single bit absorptive step attenuator. It
is suitable for use in broadband communications,
instrumentation and electronic warfare applications. The
attenuator is controlled by the application of complimentary
0V/-5V or 0/-8V signals to the control lines in accordance
with the truth tables below.
The die is fabricated using Bookham's 0.5 m gate length
MESFET process (S20). It is fully protected using Silicon
Nitride passivation for excellent performance and reliability.
Features
Broadband DC - 20GHz
Low insertion loss; 2.2dB typ
at 10GHz
Fast switching speed
High isolation; typ 45dB
at 10GHz
Through GaAs vias for
improved performance
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Thinking RF solutions
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Notes
1. Return Loss measured in low loss switch state.
2. Input power at which insertion loss compresses by 1dB.
Parameter Conditions
Min
Typ
Max
Units
Insertion Loss (reference state)
DC - 10GHz
-
2.2
2.5
dB
10GHz - 18GHz
-
3.0
3.4
dB
18GHz - 20GHz
-
3.4
3.8
dB
Maximum Attenuation
DC - 10GHz
42
45
-
dB
10GHz - 18GHz
38
40
-
dB
18GHz - 20GHz
35
38
-
dB
Input Return Loss
1
50MHz - 20GHz
13
16
-
dB
Output Return Loss
1
50MHz - 20GHz
13
16
-
dB
Switching Speed
50% control to
10%90%RF
- 5 10
ns
1dB power compression point
2
2-18 GHz
18
22
-
dBm
Electrical Performance
Ambient temperature = 22 3 C , Zo = 50
, Control voltages = 0V/-5V unless otherwise stated
P35-4310-000-200
Absolute Maximum Ratings Typical Performance at 22 C
Max control voltage
-8V
Max I/P power
+25 dBm
Operating temperature
-60C to +125C
Storage temperature
-65C to +150C
Typical Performance at 22 C
Insertion Loss
Input Return Loss
Output Return Loss
Isolation
Chip Outline
Electrical Schematic
Die size 2.91 x 1.11mm
Bond pad size 120 m x 120 m minimum
Die thickness: 200 m
Attenuation Truth Table
Pad Details
Handling, Mounting and Bonding Instructions
The back of the die is gold metallized and can be die-attached manually onto gold,
eutectically with Au-Sn (80:20) or with low temperature conductive epoxy. The
maximum allowable die temperature is 310 C for 2 minutes. Bonds should be made
onto the exposed gold pads with 17 or 25 microns pure gold or half-hard
gold wire. Bonding should be achieved with the die face at 225 C to 275 C with a
heated thermosonic wedge (approx. 125 C) and a maximum force of 60 grams. Ball
bonds may be used but care must be taken to ensure the ball size is compatible with
the bonding pads shown. The length of the bond wires should be minimised to reduce
parasitic inductance, particularly those to the RF and ground pads.
Ordering Information
P35-4310-000-200
Control Line
State
J1 RF
INPUT
J2 RF
OUTPUT
1 Attenuate
J1-J2
2 Attenuate
J1-J2
3 Enable
J1-J2
4 N/C
Control Line
State
1 2 3
J1/J2
-5V -5V 0V
Low Loss
0V 0V -5V
Attenuation
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
Tel: +44 (0) 1327 356 789
Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
P35-4310-000-200
www.bookham.com
462/SM/01577/200 Issue 1/2
Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
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