Data
sheet
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Thinking RF solutions
MMIC Driver
Amplifier, 5-6GHz
The P35-4720-000-200 is a high performance Gallium
Arsenide Driver Amplifier MMIC. It is primarily
intended for wireless applications in the 5-6 GHz bandwidth
such as U-NII (Unlicensed National Information
Infrastructure) and HIPERLAN (High Performance Local Area
Network). The three-stage amplifier requires plus and minus
5V power supplies. Also incorporated into the
design is the ability to switch between two gain states, High
and Low Gain, as well as a chip standby mode which
typically draws 0.1mA. In addition the design has been
optimised for the effects of a single bondwire at both the
input and output.
The die is fabricated using Bookham Technology's F20
Gallium Arsenide MESFET MMIC process and is fully
protected using Silicon Nitride passivation for excellent
performance and reliability.
Features
24 dB Gain typical
F20 MESFET Technology
21dBm Output Power Typ @6V
High & Low Gain States
PAE (Max) 25%
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Thinking RF solutions
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Notes
1. High Gain State
2. All Parameters Measured on Wafer
Parameter Conditions
Min
Typ
Max
Units
Small signal gain 1,2
5GHz - 6GHz
22
24
-
dB
Gain Flatness1,2
5GHz - 6GHz
-
1.0
-
dB
Input Return Loss1,2
5GHz - 6GHz
10
20
-
dB
Output Return Loss1,2
5GHz - 6GHz
8
12
-
dB
Noise Figure1,2
5GHz 6GHz
-
4.5
-
dB
P-1dB Output Power1,2
5GHz - 6GHz
-
19
-
dBm
TOI1,2 5.5GHz
-
29
-
dBm
Supply current (Idd) 2
Disabled
-
0.1
1
mA
Supply current (Idd) 1,2
Enabled (No RF)
-
118
mA
Electrical Performance
Ambient temperature = 22 3 C, ZO = 50
, Vgg = -5V, Vdd = +5V
P35-4720-000-200
Typical Performance at 22 C
High Gain
Input Return Loss
P-1dB
Output Return Loss
Low Gain
RFOW Result
0.3nH Inductance on both RF input and output
0.7nH Inductance on both RF input and output
P-1dB
5V
5.5V
6V
6.5V
Die Outline
Die size: 1.34 x 2.71 mm
DC Bond pad size: 120 m square
RF Bond pad size: 120 m square
Die thickness: 200 m
Pad Details
Truth Table
Absolute maximum Ratings
Max Vd +7.0V
Max Vgg -5.0V
Operating temperature -55C to 125C
Storage temperature -65C to +150
Ordering Information
P35-4720-000-200
Pad 6
Pad 7
Function
0V
O/C
High Gain Enabled
O/C
0V
Low Gain Enabled
-5V 0V
Amplifier
Disabled
Pad Function
1 RF
Input
2 NC
3
Vgg = -5V
4
Vg1 Sense N/C
5
Vg2 Vg3 Sense N/C
6
High/ Low Enable
7
High/ Low Enable
8 RF
Output
9 Gnd
10
Vdd = +5V
11 Gnd
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
Tel: +44 (0) 1327 356 789
Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
P35-4720-000-200
www.bookham.com
462/SM/02229/200 Issue 2
Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
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