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Электронный компонент: P35-5114

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Data
sheet
www.bookham.com
Thinking RF solutions
HEMT MMIC LNA
20 - 32GHz
The P35-5114-00-200 is a 20-32GHz Gallium Arsenide low
noise amplifier. This product is intended for use in fixed-
point and point to point microwave systems.
The die is fabricated using Bookham Technology's 0.20m
gate length, pHEMT process and is fully protected using
Silicon Nitride passivation for excellent performance and
reliability.
Features
Typical 2.2dB Noise Figure
@24GHz to 28GHz
2.36 x 0.94mm Die Size
www.bookham.com
www.bookham.com
Thinking RF solutions
www.bookham.com
Parameter Conditions
Min
Typ
Max
Units
Small Signal Gain
20-32GHz
18
21
-
dB
Input Return Loss
20-32GHz
6
12
-
dB
Output Return Loss
20-32GHz
6
12
-
dB
Noise Figure
24GHz
-
2.2
3.0
dB
Noise Figure
28GHz
-
2.2
3.0
dB
P1dB
20-32GHz
4
7
-
dBm
Drain current, Id1
-
13
-
mA
Drain current, Id2
-
13
-
mA
Drain current, Id3
-
22
-
mA
Gate Voltage; Vg1
-
-0.6
-
V
Gate Voltage; Vg2
-
-0.6
-
V
Gate Voltage; Vg3
-
-0.4
-
V
Typical RFOW Performance ( ----- Jig Meas ) (Vd1,Vd2,Vd3) (2V,2V,2V) (2V,2V,3V)
Electrical Performance
Ambient Temperature = 223 C, Zo = 50
, Vd = 2V, Vg1 & Vg2 set for Id1=Id2=13mA, Vg3 set for Id3=22mA
0
5
10
15
20
20
22
24
26
28
30
32
Frequency (GHz)
Return Loss (dB)
P35-5114-000-200
Output Return Loss (dB)
Notes
1. All parameters measured on wafer
0
5
10
15
20
20
22
24
26
28
30
32
Frequency (GHz)
Return Loss (dB)
0
5
10
15
20
25
30
20
22
24
26
28
30
32
Frequency (GHz)
Gain (dB)
Gain
0
10
20
30
40
50
60
70
20
22
24
26
28
30
32
Frequency (GHz)
Isolation (dB)
Reverse Isolation
Input Return Loss (dB)
Thinking RF solutions
www.bookham.com
P35-5114-000-200
15
17
19
21
23
25
20
22
24
26
28
30
32
Frequency (GHz)
Gain (dB)
-25C
25C
50C
75C
Gain (Vdd 2v, Vgg=-0.4V)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
26
27
28
29
30
31
Frequency (GHz)
Noise Figure (dB)
-25C
25C
50C
75C
0
1
2
3
4
20
22
24
26
28
30
32
Frequency (GHz)
Noise Figure (dB)
Noise Figure
0
2
4
6
8
10
20
22
24
26
28
30
32
Frequency (GHz)
P1dB (dBm)
P1db
Noise Figure (Vdd 2v, Vgg=-0.4V)
-25
-20
-15
-10
-5
0
20
22
24
26
28
30
32
Frequency (GHz)
Return Loss (dB)
5th
25th
50th
75th
95th
Input Return Loss (2700 devices)
0
5
10
15
20
25
20
22
24
26
28
30
32
Frequency (GHz)
Gain (dB)
5th
25th
50th
75th
95th
Gain (2700 devices)
-40
-35
-30
-25
-20
-15
-10
-5
0
20
22
24
26
28
30
32
Frequency (GHz)
Return Loss (dB)
5th
25th
50th
75th
95th
Output Return Loss (2700 devices)
Typical RFOW Performance
Thinking RF solutions
www.bookham.com
P35-5114-000-200
Frequency S11
S21
S12
S22
(GHz)
Mag
Angle
Mag
Angle
Mag
Angle
Mag
Angle
20
0.30
-4.5
15.08
7.2
0.0008
-114.4
0.44
169.8
20.5
0.26
-12.1
14.86
-11.3
0.0012
-149.4
0.41
166
21
0.22
-21.3
14.61
-28.5
0.001
165.9
0.39
161.2
21.5
0.18
-27
13.92
-45.7
0.0009
-79.5
0.35
158.7
22
0.16
-34
13.38
-60.6
0.0019
-171.4
0.33
156.2
22.5
0.15
-46.1
12.95
-75
0.0018
170.8
0.32
152.4
23
0.14
-59.9
12.61
-88.6
0.0013
-171.5
0.31
147.1
23.5
0.13
-75.9
12.26
-102.5
0.0016
142.6
0.30
142.9
24
0.13
-95.1
12.16
-114.5
0.0022
137
0.29
139.6
24.5
0.13
-117.2
12.14
-128.2
0.002
113.7
0.28
130.6
25
0.14
-134.4
11.95
-141.2
0.0023
81.8
0.26
123.6
25.5
0.15
-150
11.81
-153.9
0.0015
49.2
0.23
115.3
26
0.17
-162.4
11.72
-166.8
0.0011
97.9
0.20
109.9
26.5
0.19
-174.3
11.62
179.9
0.001
114.4
0.17
107
27
0.20
176.5
11.34
166.7
0.0012
103.3
0.17
109.1
27.5
0.22
172
11.10
156.7
0.0018
43.3
0.16
90.8
28
0.26
163.6
11.41
144.7
0.0013
113.5
0.13
93.9
28.5
0.28
154.5
11.56
131.7
0.0015
82.7
0.12
90.1
29
0.32
145.9
11.70
118.5
0.002
99.2
0.10
80.8
29.5
0.36
137.8
11.84
105.3
0.0018
79
0.08
77.4
30
0.40
129
11.94
91.4
0.0015
98.6
0.07
68.9
30.5
0.43
116.9
11.91
75.9
0.0017
56.9
0.06
55.1
31
0.44
106.8
11.69
61.3
0.0002
68.4
0.03
40.2
31.5
0.44
96.6
11.23
46.8
0.0019
43
0.02
16.4
32
0.44
89.6
11.01
32.9
0.0014
85.8
0.01
-81.4
Thinking RF solutions
www.bookham.com
P35-5114-000-200
Chip Outline
Pad Details
Die size:
2.36 x 0.94mm
RF bond pads (1 & 5):
120m x 120m
All other bond pads:
120m x 120m
Die Thickness:
100m
Pad
Function
1
RF Input
2
N/C
3
Vg2
4
Vg3
5
RF Output
6
Vd3
7
Vd2
8
N/C
9
Vd1
10
Vg1