Data
sheet
www.bookham.com
Thinking RF solutions
HEMT MMIC Driver
Amplifier, 25-30GHz
The P35-5126-000-200 is a high performance 25-30GHz
Gallium Arsenide driver amplifier. This product is intended
for use in fixed-point microwave systems and satellite
communications.
The die is fabricated using Bookham Technology's 0.20m
gate length, pHEMT process and is fully protected using
Silicon Nitride passivation for excellent performance and
reliability.
Features
Over 22dBm Output Power
@ 28GHz
10dB Gain from 25 to 30GHz
Small Die Size (2 x 1mm)
www.bookham.com
www.bookham.com
Thinking RF solutions
www.bookham.com
Parameter Conditions
Min
Typ
Max
Units
Small Signal Gain
25 30GHz
-
10
-
dB
Gain slope
25 30GHz
-
0.5
-
dB
Input Return Loss
25 30GHz
-
10
-
dB
Output Return Loss
25 30GHz
-
10
-
dB
Output power at 1dB
gain compression
28GHz, Vdd 5V
-
22
-
dBm
First Stage Current
By Adjustment of Vg1
-
50
-
mA
Second Stage Current
By Adjustment of Vg2
-
90
-
mA
Thermal Resistance
-
-
130
-
C/W
Electrical Performance
Ambient Temperature 223 C, Zo = 50
, Vdd = 4V, Vg1 set for Id1=50mA, Vg2 set for Id2=90mA Unless otherwise stated
Typical RFOW Performance (----- With Bondwires)
0
5
10
15
20
25
20
22
24
26
28
30
32
Frequency (GHz)
Return Loss (dB)
P35-5126-000-200
0
5
10
15
20
25
20
22
24
26
28
30
32
Frequency (GHz)
Return Loss (dB)
0
2
4
6
8
10
12
14
20
22
24
26
28
30
32
Frequency (GHz)
Gain (dB)
0
20
40
60
20
22
24
26
28
30
32
Frequency (GHz)
Reverse Isolation (dB)
Notes
1. All parameters measured on wafer
Gain
Reverse Isolation
Input Return Loss
Output Return Loss