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Электронный компонент: P35-5127

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Data
sheet
www.bookham.com
Thinking RF solutions
HEMT MMIC Driver
Amplifier, 22-34GHz
The P35-5127-000-200 is a high performance 22-34GHz
Gallium Arsenide driver amplifier. This product is intended
for use in fixed-point microwave systems and point to point
microwave systems. The second and third stages have a
common Drain and Gate connection
The die is fabricated using Bookham Technology's 0.20um
gate length, pHEMT process and is fully protected using
Silicon Nitride passivation for excellent performance and
reliability.
Features
20dBm Output Power
18dB Gain
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Parameter Conditions
Min
Typ
Max
Units
Small Signal Gain
22 34GHz
15
18
-
dB
Input Return Loss
22 34GHz
7
12
-
dB
Output Return Loss
22 34GHz
7
12
-
dB
P1dB
22 34GHz
18
20
-
dBm
Stage 1 Drain Current
By Adjustment of Vg1
-
38
-
mA
Stage 2 & 3 Drain Current
By Adjustment of Vg2/3
-
136
-
mA
Electrical Performance
Ambient Temperature 223 C, Zo = 50
, Vd1/2 = 3V/5V, Vg1 set for Id1=38mA, Vg2 set for Id2=136mA U.O.S
Typical RFOW Performance
Output Return Loss (dB)
0
5
10
15
20
20
22
24
26
28
30
32
34
36
Frequency (GHz)
Return Loss (dB)
P35-5127-000-200
Input Return Loss (dB)
0
5
10
15
20
20
22
24
26
28
30
32
34
36
Frequency (GHz)
Return Loss (dB)
Gain (dB)
0
5
10
15
20
25
20
22
24
26
28
30
32
34
36
Frequency (GHz)
Gain (dB)
Reverse Isolation (dB)
0
20
40
60
80
20
22
24
26
28
30
32
34
36
Isolation (dB)
Notes
1. All parameters measured on wafer
Thinking RF solutions
www.bookham.com
P35-5127-000-200
Typical RFOW Performance
Output Power @ 1dB compression
10
12
14
16
18
20
22
22
24
26
28
30
32
34
Frequncy (GHz)
Pout (dBm)
Pout vs Pin
10
12
14
16
18
20
22
-12 -10
-8
-6
-4
-2
0
2
4
6
Pin (dBm)
Pout (dBm)
24GHz
28GHz
32GHz
Gain vs Pin
0
5
10
15
20
25
-12 -10
-8
-6
-4
-2
0
2
4
6
Pin (dBm)
Gain (dB)
24GHz
28GHz
32GHz
Total Current vs Pin
100
125
150
175
200
-12 -10 -8
-6
-4
-2
0
2
4
6
Pin (dBm)
Current Ids (mA)
24GHz
28GHz
32GHz
Thinking RF solutions
www.bookham.com
P35-5127-000-200
Frequency
S11
S21
S12
S22
(GHz)
Mag
Angle
Mag
Angle
Mag
Angle
Mag
Angle
20
0.42
113.3
6.39
39
0.0013
113.3
0.40
-152.9
20.5
0.40
110.5
7.34
18
0.0014
126.6
0.34
-156
21
0.38
108.5
8.36
-4
0.0017
109
0.29
-157.2
21.5
0.37
106.1
9.31
-27.2
0.001
89.3
0.24
-156.7
22
0.36
102.6
10.12
-50.8
0.0008
77.1
0.20
-151.9
22.5
0.36
99.4
10.57
-74.4
0.0008
105.1
0.18
-142.3
23
0.35
95.5
10.68
-97.1
0.0008
119.1
0.18
-132.4
23.5
0.35
90.8
10.60
-119
0.0015
98.9
0.20
-128.7
24
0.35
85.2
10.37
-139.6
0.0017
114.4
0.21
-127.3
24.5
0.35
78.2
10.08
-159.4
0.0023
97
0.22
-128.8
25
0.34
71.6
9.77
-178.2
0.0025
88.6
0.22
-130.6
25.5
0.33
64.3
9.36
163.9
0.0026
78.5
0.22
-131.9
26
0.31
57.2
9.04
146.7
0.0027
71
0.22
-133.8
26.5
0.28
47.4
8.60
130.2
0.0029
53.7
0.21
-133.9
27
0.25
41.3
8.30
115.3
0.0031
37.2
0.21
-131.3
27.5
0.22
38.1
8.28
100.6
0.0022
26.1
0.22
-130.5
28
0.20
35.7
8.39
85.4
0.0015
0.6
0.25
-132.4
28.5
0.19
30.5
8.37
68.6
0.0013
3.9
0.25
-137.4
29
0.18
24.5
8.32
52.1
0.0012
28.9
0.25
-140.4
29.5
0.16
18.3
8.23
35.4
0.0012
11.4
0.26
-143.4
30
0.14
14.2
8.11
19.3
0.0009
35.7
0.26
-145.8
30.5
0.13
11.7
7.96
3.6
0.0009
0.2
0.26
-146.9
31
0.12
13.3
8.01
-11.5
0.001
26.2
0.28
-149
31.5
0.13
14
8.08
-27.4
0.0012
47.3
0.30
-151.3
32
0.12
14.9
8.22
-44.1
0.0019
38.4
0.32
-154.2
32.5
0.14
14.5
8.43
-61.3
0.0017
4.3
0.35
-159.8
33
0.16
9.5
8.57
-79.4
0.0012
3.2
0.37
-165.8
33.5
0.18
5.1
8.76
-98.1
0.0013
2.3
0.40
-171.5
34
0.21
-1.9
8.89
-117.8
0.0014
-3.5
0.42
-177.3
34.5
0.24
-10.9
9.10
-138.5
0.0019
-48.8
0.45
175.7
35
0.26
-19.4
9.16
-160.8
0.0003
-98.4
0.47
168.8
35.5
0.29
-26
9.12
175.6
0.0003
-137.9
0.49
162.9
36
0.34
-31.8
9.02
150.3
0.0009
90.2
0.53
156.5
Thinking RF solutions
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P35-5127-000-200
Pad Details
Die size:
2.36 x 0.94mm
RF bond pads (1 & 5):
120m x 120m
All other bond pads:
120m x 120m
Die Thickness:
100m
Pad
Function
1
RF Input
2
Vd1
3
Vd2/3
4
N/C
5
RF Output
6
N/C
7
Vg2/3
8
Vg1
Chip Outline
Handling and Assembly Information
Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Dice are supplied in
antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static
workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp
tweezers.
GaAs Products from Bookham Technology's H40P Foundry process are 100m thick and have through GaAs vias to
enable grounding to the circuit. Windows in the surface passivation above the bond pads are provided to allow wire
bonding to the die.
The surface to which the die are to be attached should be cleaned with a proprietary de-greasing cleaner. Eutectic
mounting should be used and entails the use of a gold-tin (AuSn) preform, approximately 0.001" thick, placed between
the die and the attachment surface. The preferred method of mounting is the use of a machine such as a Mullins 8-
140 die bonder. This utilises a heated collet and workstation with a facility for applying a scrubbing action to ensure
total wetting and avoid the formation of voids. Dry nitrogen gas is directed across the work piece.
The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280C (Note: Gold Germanium with a
higher melting temperature should be avoided, in particular for MMICs). The work station temperature should be
310C 10C. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. The strength of
the bonding formed by this method will result in fracture of the die, rather than the bond under die strength testing.
The P35-5127-000-200 amplifier die has gold bond pads. The recommended wire bonding procedure uses 25m
(0.001") 99.99% pure gold wire with 0.5-2% elongation. Thermo-compression wedge bonding is preferred though
thermosonic wire bonding may be used providing the ultrasonic content of the bond is minimised. A work station
temperature of 260C 10C with a wedge tip temperature of 120C 10C is recommended. The wedge force
should be 45 5 grams. Bonds should be made from the bond pads on the die to the package or substrate.
The RF bond pads at the input and output are 120m x 120m; all other bond pads are 120m x 120m.
The P35-5127-000-200 has been designed to include the inductance of two 25m bond wires at both the input and
output, facilitating the integration of the die into a 50
environment, these should be kept to a minimum length.
Operating and Biasing of the P35-5127-000-200
The P35-5127-000-200 is a three-stage driver amplifier. The drain bias for the second and third stages (Vd2 & Vd3) are
linked on chip; 3 volts should be connected to Vd1 and 5V connected to Vd2/3. The gate voltage (Vg1) should be set
to give 38mA in the first stage drain; the second and third stage gates are linked on chip and should be set to give
136mA in the second/third stage drain. DC bias supplies should be decoupled to ground using 100pF chip capacitors
placed close to the chip with short bondwires to the amplifier bond pads.