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Электронный компонент: P35-5142-000-200

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Data
sheet
www.bookham.com
Thinking RF solutions
HEMT MMIC
Broadband Amplifier,
< 0.5 - 40GHz
The P35-5142-000-200 is a high performance 0.5 - 40GHz
Gallium Arsenide monolithic travelling wave broadband
amplifier. The broadband amplifier is especially suited for
use as a gain block in communications systems operating at
electrical data rates up to 40Gb/s (OC768/STM-256). The
circuit is DC coupled at the RF input and output, off-chip de-
coupling capacitors on the bias lines are required to ensure
flat gain response down to KHz frequencies.
The amplifier requires a Vdd supply of +10V and a first gate
bias set to give 50% Idss. The second gate bias is fixed at +2V.
The die is fabricated using Bookham's pHEMT process and
is fully protected using Silicon Nitride passivation for
excellent performance and reliability.
Features
Cascode Configuration
12 dB Gain Typical
pHEMT technology
www.bookham.com
www.bookham.com
Thinking RF solutions
www.bookham.com
Parameter
1
Conditions Min
Typ
Max
Units
Small Signal Gain
0.5GHz - 40GHz
-
12
-
dB
Gain Ripple
0.5GHz - 40GHz
-
1
-
dB
Input Return Loss
0.5GHz - 40GHz
-
10
-
dB
Output Return Loss
0.5GHz - 40GHz
-
10
-
dB
Deviation from
-
-
-
-
Linear insertion Phase
0.5GHz - 35GHz
-
5
-
Bias supply current (Idd)
Vdd =10V Vg1=50%Idss
-
90
-
mA
Electrical Performance
Ambient temperature = 223 C, Zo = 50
, Vdd = 10V, Vg1 Set for Id = 50% Idss, Vg2 = +2.0V
0
5
10
15
20
25
30
35
40
0.5
5.5
10.5
15.5
20.5
25.5
30.5
35.5
40.5
Frequency (GHz)
Return Loss (dB)
P35-5142-000-200
Output Return Loss (dB)
Notes
1. All Measurements RFOW
0
5
10
15
20
25
30
35
40
0.5
5.5
10.5
15.5
20.5
25.5
30.5
35.5
40.5
Frequency (GHz)
Return Loss (dB)
0
2
4
6
8
10
12
14
16
0.5
5.5
10.5
15.5
20.5
25.5
30.5
35.5
40.5
Frequency (GHz)
Gain (dB)
Gain
0
10
20
30
40
50
60
0.5
5.5
10.5
15.5
20.5
25.5
30.5
35.5
40.5
Frequency (GHz)
Isolation(dB)
Reverse
Input Return Loss (dB)
Typical RFOW Performance
P35-5142-000-200
Pad Details
Pad
Function
1
RF Input
2
RF Output
3
Vg1
4
Vg1
5
Gnd
6
Vdd
7
Vdd
8
Vg2
www.bookham.com
462/SM/02343/200 Issue 2
Bookham Technology 2003 Bookham is a registered trademark of Bookham Technology plc
MMICS
Bookham Technology plc
Caswell
Towcester
Northamptonshire
NN12 8EQ
UK
Tel: +44 (0) 1327 356 789
Fax: +44 (0) 1327 356 698
rfsales@bookham.com
Important Notice
Bookham Technology has a policy of
continuous improvement. As a result
certain parameters detailed on this flyer
may be subject to change without notice.
If you are interested in a particular product
please request the product specification
sheet, available from any RF sales
representative.
Die Details
Die size:
2.585 x 1.325mm
RF bond pads (1 & 8)
120 x 80m
All other bond pads
120 x 120m
Die thickness:
100m
Handling and Assembly Information
Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage.
Dice are supplied in antistatic containers, which should be opened in cleanroom conditions
at an appropriately grounded anti-static workstation. Devices need careful handling using
correctly designed collets, vacuum pickups or, with care, sharp tweezers.
GaAs Products from Caswell Technology's pHEMT Foundry process are 100m thick and
have through GaAs vias to enable grounding to the circuit. Windows in the surface
passivation above the bond pads are provided to allow wire bonding to the die.
The surface to which the die are to be attached should be cleaned with a proprietary de-
greasing cleaner. Conductive epoxy mounting is recommended for the assembly of
pHEMT circuits. Recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured at
150C for 1 hour in a nitrogen atmosphere. The epoxy should be applied sparingly to
avoid encroachment of the epoxy on to the top surface of the die. An epoxy fillet should
be visible around the total die periphery.
Eutectic mounting can also be used and entails the use of a gold-tin (AuSn) preform,
approximately 0.001" thick, placed between the die and the attachment surface. The
preferred method of mounting is the use of a machine such as a Mullins 8-140 die bonder.
This utilises a heated collet and workstation with a facility for applying a scrubbing action
to ensure total wetting and avoid the formation of voids. Dry nitrogen gas is directed
across the work piece.
The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280C(Note:
Gold Germanium with a higher melting temperature should be avoided, in particular for
MMICs). The work station temperature should be 310C 10C. The collet should be
heated, and the die pre-heated to avoid excessive thermal shock. The strength of the
bonding formed by this method will result in fracture of the die, rather than the bond under
die strength testing.
The P35-5142-000-200 amplifier die has gold bond pads. The recommended wire
bonding procedure uses 25m (0.001") 99.99% pure gold wire with 0.5-2% elongation.
Thermo-compression wedge bonding is preferred though thermosonic wire bonding may
be used providing the ultrasonic content of the bond is minimised. A work station
temperature of 260C 10C with a wedge tip temperature of 120C 10C is
recommended. The wedge force should be 45 5 grams. Bonds should be made from
the bond pads on the die to the package or substrate.
The RF bond pads at the input and output are 80m x 120m; all other bond pads are
120m x 120m. The P35-5142-000-200 has been designed to include the inductance of a
single 0.2mm length of 25m bond wire at both the input and output, facilitating the
integration of the die into a 50
environment.
Operating and Biasing of the P35-5142-000-200
The P35-5142-000-200 is an eight-stage cascode traveling wave amplifier. The drain bias
(Vdd) is common to all stages and should be set to +10 volts. The first gate voltage (Vg1) is
adjusted to set Id at 50% of Idss with the second gate voltage (Vg2) set to +2 volts. All DC
bias supplies should be decoupled to ground using 220pF chip capacitors placed close to
the chip with short bondwires to the amplifier bond pads and then further decoupled with
100nF capacitors at a suitable position.
Ordering Information
P35-5142-000-200