2FAF-C10R - Integrated Passive & Active Device
*RoHS Directive 2002/95/EC Jan 27 2003, including Annex
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
SOLDER
BUMPS
SILICON
DIE
General Information
Features
Lead free versions available
RoHS compliant (lead free version)*
Bidirectional EMI filtering
ESD protection > 25 k volts
Protects 4 data lines
Applications
Cell phones
PDAs and notebooks
Digital cameras
MP3 players and GPS
The 2FAF-C10R device, manufactured using Thin Film on Silicon
technology, provides ESD protection and EMI filtering for the data
ports of portable electronic devices such as cell phones, modems
and PDAs. The device incorporates four low pass filter channels
where each channel has a series 100 ohm resistor assuring a
minimum of 28 dB attenuation from 800 MHz to 3 GHz. The device
is suitable for EMI filtering of GSM, CDMA, W-CDMA, WLAN and
Bluetooth frequencies.
Each internal and external port of the four channels includes a TVS
diode for ESD protection. The ESD protection provided by the
component enables a data port to withstand a minimum 8 KV
Contact / 15 KV Air Discharge per the ESD test method specified in
IEC 61000-4-2. The device measures 1.33 mm x 2 mm and is
available in a 10 bump CSP package intended to be mounted directly
onto an FR4 printed circuit board. The CSP device meets typical
thermal cycle and bend test specifications without the use of an
underfill material.
*RoHS COMPLIANT
VERSIONS
AVAILABLE
Electrical Characteristics (@ TA = 25 C Unless Otherwise Noted)
Thermal Characteristics (@ TA = 25 C Unless Otherwise Noted)
Parameter
Symbol
Min.
Nom.
Max.
Unit
Operating Temperature Range
T
J
-40
+25
+85
C
Storage Temperature Range
T
STG
-55
+25
+150
C
Per Line Specification
Symbol
Min.
Nom.
Max.
Unit
Resistance
R
80
100
120
--
Capacitance @ 2.5 V, 1 MHz
C
24
30
36
pF
Rated Standoff Voltage
V
WM
5.0
V
Breakdown Voltage @ 1 mA
V
BR
6.0
V
Forward Voltage @ 10 mA
V
F
0.8
V
Leakage Current @ 3.3 V
I
R
0.05
0.1
A
Filter Attenuation @ 800-3000 MHz
S21
-28
-35
dB
ESD Protection: IEC 61000-4-2
Contact Discharge
Air Discharge
8
15
kV
kV
Power Dissipation per Resistor
P
D
100
mW
DIMENSIONS =
MILLIMETERS
(INCHES)
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Mechanical Characteristics
2FAF-C10R - Integrated Passive & Active Device
1.285 - 1.375
(0.0506 - 0.0541)
1.981 - 2.032
(0.0780 - 0.0800)
0.180 - 0.280
(0.0071 - 0.0110)
0.180 - 0.280
(0.0071 - 0.0110)
0.495 - 0.505
(0.0195 - 0.0199)
0.3
(0.012)
0.245 - 0.255
(0.0096 - 0.0100)
DIA.
0.430 - 0.440
(0.0169 - 0.0173)
0.430 - 0.440
(0.0169 - 0.0173)
A1
A3
A4
A6
C1
C3
B2
B5
C4
C6
0.432 - 0.559
(0.017 - 0.022)
0.330 - 0.457
(0.013 - 0.018)
1.285 - 1.375
(0.0506 - 0.0541)
This is a silicon-based device and is packaged using chip scale packaging technology. Solder bumps, formed on the silicon die,
provide the interconnect medium from die to PCB. The bumps are arranged on the die in a regular grid formation. The grid pitch is
0.5 mm and the dimensions for the packaged device are shown below.
Reliability data is gathered on an ongoing basis for Bourns
Integrated Passive and Active Devices.
"Package level" testing of the integrity of the solder joint is carried out on an independent Daisy-Chain test device. A 25-Pin Daisy
Chain component is available from Bourns for this purpose (part number 2TAD-C25R). This is a 5 x 5 array featuring 0.5 mm pitch
solder bumps. The Distance to Neutral Point (DNP) on that component is larger than that of the 2FAF-C10R and is thus deemed
suitable for Thermal Cycle testing.
"Silicon level" reliability performance is based on similarity to other integrated passive CSP devices from Bourns.
Reliability Data
Frequency Response
Loss - dB
-60
-50
-20
-30
-40
-10
0
Frequency - MHz
0.1
1.0
10.0
100.0
1000.0
1000.0
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
2FAF-C10R - Integrated Passive & Active Device
Block Diagram
How to Order
2 FAF - C10R __
Thinfilm
Model
Chipscale
No. of Solder Bumps
Packaging Option
R = Tape and Reel
Packaged 5000 pcs. / 7 reel
Terminations
LF = Sn/Ag/Cu (lead free)
__ = Sn/Pb
GND
EXT1
R1:
100 ohms
R2:
100 ohms
INT1
EXT2
INT2
GND
EXT3
R3:
100 ohms
R4:
100 ohms
INT3
EXT4
INT4
The CSP device block diagram below includes the pin names and basic electrical
connections associated with each channel.
Please consult the "Bourns Design
Guide Using CSP" for notes on PCB
design and SMT Processing.
PCB Design and SMT Processing
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
2FAF-C10R - Integrated Passive & Active Device
The Pin-Out for the device is shown below. Note also that the device is shown with bottom side solder pads facing up.
Device Pin Out
The surface mount product is packaged in an 8 mm x 4 mm Tape and Reel format per EIA-481 standard.
Packaging
A
B
C
EXT1
1
2
EXT2
3
4
EXT3
5
6
EXT4
INT1
INT2
GND
INT3
INT4
GND
2.0 0.05
(.08 .002)
0.3 0.05
(.01 .002)
1.18 0.1
(0.05 0.004)
1.52 0.1
(.06 .004)
1.75 0.1
(.07 .004)
3.50 0.05
(.14 .002)
8.0 0.3
(.31 .01)
0.76 0.1
(.03 .004)
ORIENTATION
OF COMPONENT
IN POCKET
BACKSIDE FACING UP
TOP SIDE VIEW
(INTO COMPONENT POCKET)
0.3
(0.01)
4.0 0.1
(.16 .004)
4.0 0.1
(.16 .004)
0.25
(0.010)
TYP.
R
1.5 0.1/-0
(.06 .004/-0)
DIA.
MAX.
R
Pin Out
Function
Pin Out
Function
A1
EXT1
C1
INT1
A3
EXT2
C3
INT2
A4
EXT3
C4
INT3
A6
EXT4
C6
INT4
B2
GND
B5
GND
DIMENSIONS =
MILLIMETERS
(INCHES)
COPYRIGHT 2005, BOURNS, INC. LITHO IN U.S.A. 08/04 e/IPA0411
2FAF-C10R REV. B, 03/05
Asia-Pacific:
TEL +886- (0)2 25624117 FAX +886- (0)2 25624116
Europe:
TEL +41-41 768 5555 FAX +41-41 768 5510
The Americas: TEL +1-951 781-5492 FAX +1-951 781-5700
www.bourns.com
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