BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
P R O D U C T
I N F O R M A T I O N
1
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with the
BD539 Series
45 W at 25C Case Temperature
5 A Continuous Collector Current
Customer-Specified Selections Available
absolute maximum ratings at 25C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150C case temperature at the rate of 0.36 W/C.
3. Derate linearly to 150C free air temperature at the rate of 16 mW/C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BD540
BD540A
BD540B
BD540C
V
CBO
-40
-60
-80
-100
V
Collector-emitter voltage (I
B
= 0) (see Note 1)
BD540
BD540A
BD540B
BD540C
V
CEO
-40
-60
-80
-100
V
Emitter-base voltage
V
EBO
-5
V
Continuous collector current
I
C
-5
A
Continuous device dissipation at (or below) 25C case temperature (see Note 2)
P
tot
45
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 3)
P
tot
2
W
Operating free air temperature range
T
A
-65 to +150
C
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
2
P R O D U C T
I N F O R M A T I O N
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= -30 mA
(see Note 4)
I
B
= 0
BD540
BD540A
BD540B
BD540C
-40
-60
-80
-100
V
I
CES
Collector-emitter
cut-off current
V
CE
= -40 V
V
CE
= -60 V
V
CE
= -80 V
V
CE
= -100 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
BD540
BD540A
BD540B
BD540C
-0.2
-0.2
-0.2
-0.2
mA
I
CEO
Collector cut-off
current
V
CE
= -30 V
V
CE
= -60 V
I
B
= 0
I
B
= 0
BD540/540A
BD540B/540C
-0.3
-0.3
mA
I
EBO
Emitter cut-off
current
V
EB
= -5 V
I
C
= 0
-1
mA
h
FE
Forward current
transfer ratio
V
CE
= -4 V
V
CE
= -4 V
V
CE
= -4 V
I
C
= -0.5 A
I
C
= -1 A
I
C
= -3 A
(see Notes 4 and 5)
40
30
12
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= -125 mA
I
B
= -375 mA
I
B
= -1 A
I
C
= - 1A
I
C
= -3 A
I
C
= - 5A
(see Notes 4 and 5)
-0.25
-0.8
-1.5
V
V
BE
Base-emitter
voltage
V
CE
= -4 V
I
C
= -3 A
(see Notes 4 and 5)
-1.25
V
h
fe
Small signal forward
current transfer ratio
V
CE
= -10 V
I
C
= -0.5 A
f = 1 kHz
20
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= -10 V
I
C
= -0.5 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
2.78
C/W
R
JA
Junction to free air thermal resistance
62.5
C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
Turn-on time
I
C
= -1 A
V
BE(off)
= 4.3 V
I
B(on)
= -0.1 A
R
L
= 30
I
B(off)
= 0.1 A
t
p
= 20 s, dc
2%
0.3
s
t
off
Turn-off time
1
s
BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
3
P R O D U C T
I N F O R M A T I O N
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-001
-01
-10
-10
h
FE
-
D
C
C
u
rre
n
t
Ga
i
n
10
100
1000
TCS632AH
V
CE
= -4 V
t
p
= 300 s, duty cycle < 2%
T
C
= 25C
T
C
= 80C
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - mA
-01
-10
-10
-100
-1000
V
C
E
(
sat
)
- Co
l
l
e
c
to
r-Em
i
tte
r Sa
tu
ra
ti
o
n
Vo
l
t
a
g
e
- V
-001
-01
-10
-10
TCS632AB
I
C
= -100 mA
I
C
= -300 mA
I
C
= -1 A
I
C
= -3 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
-001
-01
-1
-10
V
BE
-
B
a
se-
E
m
i
t
t
e
r
V
o
l
t
ag
e
-
V
-05
-06
-07
-08
-09
-1
TCS632AC
V
CE
= -4 V
T
C
= 25C
BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
4
P R O D U C T
I N F O R M A T I O N
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
-10
-10
-100
-1000
I
C
- Co
l
l
e
c
to
r Cu
rr
e
n
t - A
-001
-01
-10
-10
SAS632AE
BD540
BD540A
BD540B
BD540C
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
to
t
-
Ma
xi
mu
m
P
o
w
e
r
D
i
s
s
i
p
at
i
o
n
-
W
0
10
20
30
40
50
TIS631AC
BD540, BD540A, BD540B, BD540C
PNP SILICON POWER TRANSISTORS
5
P R O D U C T
I N F O R M A T I O N
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
1,23
1,32
4,20
4,70
1
2
3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2
VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version
1,
18.0
mm.
Version
2,
17.6
mm.
MDXXBE
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