BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
P R O D U C T
I N F O R M A T I O N
1
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Designed for Complementary Use with the
BD546 Series
85 W at 25C Case Temperature
15 A Continuous Collector Current
Customer-Specified Selections Available
absolute maximum ratings at 25C case temperature (unless otherwise noted)
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150C case temperature at the rate of 0.68 W/C.
3. Derate linearly to 150C free air temperature at the rate of 28 mW/C.
RATING
SYMBOL
VALUE
UNIT
Collector-base voltage (I
E
= 0)
BD545
BD545A
BD545B
BD545C
V
CBO
40
60
80
100
V
Collector-emitter voltage (I
B
= 0) (see Note 1)
BD545
BD545A
BD545B
BD545C
V
CEO
40
60
80
100
V
Emitter-base voltage
V
EBO
5
V
Continuous collector current
I
C
15
A
Continuous device dissipation at (or below) 25C case temperature (see Note 2)
P
tot
85
W
Continuous device dissipation at (or below) 25C free air temperature (see Note 3)
P
tot
3.5
W
Operating free air temperature range
T
A
-65 to +150
C
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
Lead temperature 3.2 mm from case for 10 seconds
T
L
260
C
SOT-93 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
B
C
E
1
2
3
BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
2
P R O D U C T
I N F O R M A T I O N
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 4. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
electrical characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
(BR)CEO
Collector-emitter
breakdown voltage
I
C
= 30 mA
(see Note 4)
I
B
= 0
BD545
BD545A
BD545B
BD545C
40
60
80
100
V
I
CES
Collector-emitter
cut-off current
V
CE
= 40 V
V
CE
= 60 V
V
CE
= 80 V
V
CE
= 100 V
V
BE
= 0
V
BE
= 0
V
BE
= 0
V
BE
= 0
BD545
BD545A
BD545B
BD545C
0.4
0.4
0.4
0.4
mA
I
CEO
Collector cut-off
current
V
CE
= 30 V
V
CE
= 60 V
I
B
= 0
I
B
= 0
BD545/545A
BD545B/545C
0.7
0.7
mA
I
EBO
Emitter cut-off
current
V
EB
= 5 V
I
C
= 0
1
mA
h
FE
Forward current
transfer ratio
V
CE
= 4 V
V
CE
= 4 V
V
CE
= 4 V
I
C
= 1 A
I
C
= 5 A
I
C
= 10 A
(see Notes 4 and 5)
60
25
10
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 625 mA
I
B
= 2 A
I
C
= 5 A
I
C
= 10 A
(see Notes 4 and 5)
0.8
1
V
V
BE
Base-emitter
voltage
V
CE
= 4 V
I
C
= 10 A
(see Notes 4 and 5)
1.8
V
h
fe
Small signal forward
current transfer ratio
V
CE
= 10 V
I
C
= 0.5 A
f = 1 kHz
20
|
h
fe
|
Small signal forward
current transfer ratio
V
CE
= 10 V
I
C
= 0.5 A
f = 1 MHz
3
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JC
Junction to case thermal resistance
1.47
C/W
R
JA
Junction to free air thermal resistance
35.7
C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
on
Turn-on time
I
C
= 6 A
V
BE(off)
= -4 V
I
B(on)
= 0.6 A
R
L
= 5
I
B(off)
= -0.6 A
t
p
= 20 s, dc
2%
0.6
s
t
off
Turn-off time
1
s
BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
3
P R O D U C T
I N F O R M A T I O N
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
01
10
10
h
FE
-
D
C
C
u
rre
n
t
Ga
i
n
10
10
100
1000
TCS633AJ
V
CE
= 4 V
T
C
= 25C
t
p
= 300 s, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
I
B
- Base Current - A
001
01
10
10
V
CE
(
s
a
t
)
- Co
l
l
e
c
to
r-Em
i
tte
r Sa
tu
ra
ti
o
n
V
o
l
t
a
g
e
- V
001
01
10
10
TCS633AB
I
C
= 1 A
I
C
= 3 A
I
C
= 6 A
I
C
= 10 A
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
01
1
10
V
BE
- Ba
s
e
-E
m
i
tte
r Vo
l
t
a
g
e
- V
06
08
10
12
14
16
18
TCS633AC
V
CE
= 4 V
T
C
= 25C
BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
4
P R O D U C T
I N F O R M A T I O N
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
10
10
100
1000
I
C
- Co
l
l
e
c
to
r Cu
rre
n
t
- A
001
01
10
10
100
SAS633AE
BD545
BD545A
BD545B
BD545C
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
T
C
- Case Temperature - C
0
25
50
75
100
125
150
P
to
t
-
Ma
xi
mu
m
P
o
w
e
r
D
i
s
s
i
p
at
i
o
n
-
W
0
20
40
60
80
100
TIS633AC
BD545, BD545A, BD545B, BD545C
NPN SILICON POWER TRANSISTORS
5
P R O D U C T
I N F O R M A T I O N
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
SOT-93
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
SOT-93
ALL LINEAR DIMENSIONS IN MILLIMETERS
4,90
4,70
1,37
1,17
0,78
0,50
2,50 TYP.
15,2
14,7
12,2 MAX.
16,2 MAX.
18,0 TYP.
31,0 TYP.
1,30
1,10
11,1
10,8
4,1
4,0
3,95
4,15
1
2
3
NOTE A: The centre pin is in electrical contact with the mounting tab.
MDXXAW
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